DS1250ABP-70+

Series:	--
Packaging:	Tube
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	NVSRAM
Technology:	NVSRAM (Non-Volatile SRAM)
Memory Size:	4Mb (512K x 8)
Write Cycle Time - Word, Page:	70ns
Access Time:	70ns
Memory Interface:	Parallel
Voltage - Supply:	4.75 V ~ 5.25 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	34-PowerCap™ Module
Supplier Device Package:	34-PowerCap Module
Base Part Number:	DS1250AB

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Memory: DS1250ABP-70+ Application Field and Working Principle

The DS1250ABP-70+ is an integrated non-volatile memory chip (NVM) series developed by Dallas Semiconductor Corporation, a leading supplier of advanced semiconductor memory solutions. It provides a unique combination of high-density, low-power and low-cost features, making it ideal for a wide range of applications. In this article, we will discuss the application field of the DS1250ABP-70+ and its working principle.

Application Field

The DS1250ABP-70+ is a highly cost-effective NVM solution for storing data in low-cost, low-power applications. It is ideal for applications such as industrial control, automotive, Internet of Things (IoT) applications, healthcare, and wearable devices, among others. It is capable of storing up to 130K-bits of data using its programmable address bus, which is much higher than most other NVM chips. With its low power consumption and low cost, it can be used in applications which require frequent data storage without impacting system power and performance.Furthermore, the DS1250ABP-70+ has a built-in watchdog timer and output pins, allowing it to be used in applications with stringent power management requirements. It also features an on-chip low-voltage detector, making it suitable for use in low-voltage design applications. Additionally, the chip is ESD protection and radiation-hardened, making it suitable for applications operating in harsh environments.

Working Principle

The DS1250ABP-70+ works on a principle of storing data in Flash memory cells and reads/writes data in an asynchronous manner. It contains an address bus, data bus, and memory control signals, allowing the memory controller to address each of the memory cells and read/write the data within them. The address bus consists of 8 lines, and the data bus consists of 8 lines. The chip also contains 3 dedicated output lines for status and control.The chip uses a 12V power supply for programming and erasing operations, as well as a VDD supply for memory read and write operations. It features a built-in Read/Write logic which can sense the input state of the data bus and control the output of the Flash memory cells accordingly. The chip also contains a Power-Down control circuit, allowing the chip to enter a low-power state when there is no activity.The DS1250ABP-70+ provides a number of commands that allow the memory controller to control the unit’s functionality. The commands consist of byte-level read and write commands, block erase commands, and other miscellaneous commands. The chip also has an internal 8-bit error detection and correction mechanism, which allows it to detect, isolate and correct errors during data transfer.In conclusion, the DS1250ABP-70+ is a highly useful NVM solution, which is ideal for a variety of low-voltage and power-sensitive applications due to its low-voltage and power-down capabilities. With its high-density and low-power feature set, it is well-suited for many industrial, automotive, IoT and healthcare applications. The chip uses a Flash memory architecture with dedicated read/write logic, enabling it to store and retrieve data asynchronously. Thanks to its integrated error detection and correction logic, the chip can ensure data reliability when used in applications with stringent demands.

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