DS1250W-150 Allicdata Electronics
Allicdata Part #:

DS1250W-150-ND

Manufacturer Part#:

DS1250W-150

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Maxim Integrated
Short Description: IC NVSRAM 4M PARALLEL 32EDIP
More Detail: NVSRAM (Non-Volatile SRAM) Memory IC 4Mb (512K x 8...
DataSheet: DS1250W-150 datasheetDS1250W-150 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 4Mb (512K x 8)
Write Cycle Time - Word, Page: 150ns
Access Time: 150ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 32-DIP Module (0.600", 15.24mm)
Supplier Device Package: 32-EDIP
Base Part Number: DS1250W
Description

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The DS1250W-150 is a non-volatile memory device manufactured by Dallas Semiconductor. It is a high-capacity, non-volatile memory device with a 1.5 Mbit capacity, allowing it to store data, even when power is not available. This makes it an ideal memory solution for many industrial, automotive, communications and consumer applications.

Applications
The primary application of the DS1250W-150 is as a non-volatile memory device. It can be used to store data, even when power is not available, making it a great choice for applications where data needs to be retained for long periods of time and frequent power outages or interruptions. It can be used in a wide range of applications, from automotive to communications to consumer.

In the automotive and industrial sector, the device can be used to store electronic control unit (ECU) parameters and operating status. In communications, it can be used to store routing protocols and memory maps. And in the consumer sector, it can be used to store video game configurations and user profile information.

Working Principle
The DS1250W-150 is a non-volatile memory device and functions using a floating-gate technology. This technology uses a tunneling process to transfer information from the cell to the memory array. The process uses electrons to “tunnel” through a thin insulating layer between two conducting layers, creating a “charge transfer” effect that stores data as charges on the floating gate. This data is stored even when power is not available and can be retrieved when the power is restored.

The memory cell being used is a dual gate architecture, which is designed to minimize charge leakage and reduce the current flow through the device. This improves the storage stability, allowing data to stay stored for much longer periods of time. The device is also very reliable and is capable of more than 10 million write cycles.

The DS1250W-150 also features password protection, allowing users to protect their data from unauthorized access. It also has write protection, which prevents unintentional overwriting of data. All of these features make it a very secure and reliable memory solution.

The specific data is subject to PDF, and the above content is for reference

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