DS1250YL-70

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	NVSRAM
Technology:	NVSRAM (Non-Volatile SRAM)
Memory Size:	4Mb (512K x 8)
Write Cycle Time - Word, Page:	70ns
Access Time:	70ns
Memory Interface:	Parallel
Voltage - Supply:	4.5 V ~ 5.5 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	34-LPM
Supplier Device Package:	34-LPM
Base Part Number:	DS1250Y

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Working Principle of DS1250YL-70 Memory

The DS1250YL-70 is a type of integrated non-volatile NVRAM (Non-Volatile Random Access Memory) semiconductor device for computers. It is manufactured by Dallas Semiconductor, and is used in a wide range of memory applications. In this article, we will take a closer look at the working principle of the DS1250YL-70 and explore its application field. To understand the working principle of the DS1250YL-70, it is important to first understand the concept of NVRAM. In short, NVRAM is a type of computer memory that stores data when no power is applied and remembers it even after power is applied. It is non-volatile, meaning that it does not lose data when the power is turned off. It combines the optical storage capability of an optical disk drive with the random access capability of a hard disk drive. This gives it the advantages of both types of media, while avoiding their respective disadvantages. The DS1250YL-70 is a non-volatile RAM device with a 64 Kbit memory capacity. It is based on a dual in-line (DIP) form factor and can be used in either a 5V or a 3V system. It has an operating current of 1.3mA and an operating temperature range of -40℃ to 85℃. The memory device has a 100K byte write cycle endurance and a retention time of ten years at 25℃. The DS1250YL-70 memory device works through the combination of an external CMOS EEPROM, an NVRAM controller, an NVRAM write-control, a power-fail capacitor, and a buffered Global Data Bus. The CMOS EEPROM provides the NVRAM, which is the actual memory functionality, while the NVRAM controller, write-control and buffered Global Data Bus provide the control logic. The power-fail capacitor provides a source of back-up power to ensure that the device\'s contents are still available in the event of a power loss. The operation of the DS1250YL-70 memory device is based on two primary operations: writing data and retrieving data. When a write operation is initiated, the data is transferred from an external source to the NVRAM and stored in the proper address. The write operation is then completed by the NVRAM controller and write-control sequentially. This allows the device to protect the data during a power loss or data corruption. When a retrieval operation is initiated, the NVRAM controller sends a signal to the write-control circuit to select the specified address to access the data. The write-control circuit will then send the data back to the external source. During both write and retrieval operations, the power-fail capacitor ensures that data is stored and accessible in the event of a power loss. The DS1250YL-70 memory device finds a wide range of applications in various computing, industrial and automotive applications. In computing, it is used to store application settings, system parameters and program data. In industrial and automotive applications, it is used to store control-specific data and parameters. In addition, the device can be used as an internal memory module for embedded systems. In conclusion, the DS1250YL-70 is a non-volatile RAM device with a 64 Kbit memory capacity. It works through a combination of an external CMOS EEPROM and several control circuits, and finds applications in various computing, industrial and automotive applications. It is a reliable and stable memory device that offers long-term data retention and reliable operation.

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