DS1258W-100 Allicdata Electronics
Allicdata Part #:

DS1258W-100-ND

Manufacturer Part#:

DS1258W-100

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Maxim Integrated
Short Description: IC NVSRAM 2M PARALLEL 40EDIP
More Detail: NVSRAM (Non-Volatile SRAM) Memory IC 2Mb (128K x 1...
DataSheet: DS1258W-100 datasheetDS1258W-100 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 2Mb (128K x 16)
Write Cycle Time - Word, Page: 100ns
Access Time: 100ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 40-DIP Module (0.610", 15.495mm)
Supplier Device Package: 40-EDIP
Base Part Number: DS1258W
Description

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The DS1258W-100 is a monolithic, bidirectional, low voltage, 256Kx8 CMOS battery-backed SRAM. It is in the Memory category and is used in a variety of applications such as computer memory, networking equipment, industrial controllers and medical imaging equipment.

The DS1258W-100 uses an array of non-volatile memory cells that retain their contents when power is removed. The DS1258W-100 has a low voltage operating range and a separate power supply pin that is used to provide backup power during power failure. The wide operating temperature range (from -40 Celsius to +85 Celsius) makes the DS1258W-100 suitable for many rugged applications, including those in automotive and industrial environments.

The DS1258W-100 is available in 8-pin, 16-pin and 24-pin packages. It features low power consumption, fast access times and high speed data rates. It features an integrated watchdog timer and power-on reset circuit.

The working principle of the DS1258W-100 is fairly simple. The memory cell array consists of 256K storage cells arranged in an 8-bit by 256K format. Each storage cell consists of two transistors (M1 and M2) and the drain of one transistor is connected to the gate of the other transistor.

When power is applied to the chip, the data stored in the memory cells is retained. When the memory is read, the data is read out by applying the appropriate address to the chip. The power on reset circuitry ensures that when the power is applied, the data stored in the memory cells is retained. The watchdog timer can be used to reset the chip in the event of a power failure or other malfunction.

The DS1258W-100 is an ideal choice for many applications requiring non-volatile RAM. With its low power consumption, fast access times and wide operating temperature range, it is a great choice for memory applications requiring reliability and longevity.

The DS1258W-100 is a durable and reliable memory solution for a variety of applications. It is easy to use and offers excellent performance. It is ideal for both industrial and consumer applications, due to its wide operating temperature range. With its low power consumption and watchdog timer, the DS1258W-100 is an ideal choice for many memory applications.

The specific data is subject to PDF, and the above content is for reference

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