DS1258W-150#

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DS1258W-150# is a 32-Kb nonvolatile SRAM containing 150 bits of memory, where each bit can store a "1" or a "0", depending on its contents. The contents of the nonvolatile SRAM are maintained even in the absence of power allowing "write/erase" cycles to occur a thousand times faster than required for a standard SRAM.

Application Field

DS1258W-150# memories are most widely used in a range of applications including memory backup, data buffering and long-term storage, which can include memory cards, microcontrollers, digital systems, embedded systems, and handheld units. Its simplified data write and reduce operations make it suitable for system with low power and low complexity applications.

Working Principle

DS1258W-150# works off of a “write/erase” cycle. First, the data to be stored is written in the memory using conventional logic device. Then, the data is erase using special pulsed erase logic devices (ELDs). This erase logic devices maintain a low level of their output until a minimum voltage reaches their control inputs. When the control inputs reach the given threshold, the outputs switch to a high level and erase the memory cell.

The multi-byte write mode is a variation of the write/erase operation. In the multi-byte write mode, eight successive data bytes can be written to the memory in an organized manner, resulting in an improved throughput. This is suitable for applications where the data is accessed randomly in byte-wise manner and need to be updated simultaneously.

Finally, the memory can be read with conventional logic devices. The memory can store up to 11 bits, which can be programmed for lower-power standby for faster operations.

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