DS1258Y-70 Allicdata Electronics
Allicdata Part #:

DS1258Y-70-ND

Manufacturer Part#:

DS1258Y-70

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Maxim Integrated
Short Description: IC NVSRAM 2M PARALLEL 40EDIP
More Detail: NVSRAM (Non-Volatile SRAM) Memory IC 2Mb (128K x 1...
DataSheet: DS1258Y-70 datasheetDS1258Y-70 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 2Mb (128K x 16)
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 40-DIP Module (0.610", 15.495mm)
Supplier Device Package: 40-EDIP
Base Part Number: DS1258Y
Description

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The DS1258Y-70 is a 64-Kb Nonvolatile Static RAM (NVRAM) designed to meet the needs of applications that require a reliable, long-term memory solution. The device features a zero-power CMOS design, low standby power operation and an expanded temperature range, making it an ideal choice for applications that require reliable data retention over a wide temperature range.

In terms of application fields, the DS1258Y-70 offers high performance and an unmatched combination of features for rugged automotive, avionics and industrial control applications. It has the ability to operate from a wide temperature range from -40°C to +125°C, which allows it to withstand high shock and vibration, making it the perfect memory solution for the most demanding automotive, avionics, and industrial environments.

The most striking feature of the DS1258Y-70 is its ability to provide non-volatile memory storage for critical system parameters, allowing for quick data recovery during system power-up or power-failures. Since no refreshing is required during operation, the device has an exceptionally low standby power consumption, making it ideal for battery-operated applications. It also features a low-voltage write protection feature that adds further protection against rogue write operations. Additionally, the device supports part- and 8-write lockout capability, which adds to its reliability.

The DS1258Y-70 also features 2-range power supply and the ability to be programmed via a single 1-wire interface. Programming the device can be done in-system or out-of-system with a 1-wire adapter. Data stored in the device is based on the state of its cells, 0 or 1. The data is permanently retained even with power failure.

The working principle of the DS1258Y-70 is simple. The device contains two memory arrays, 64k-bits with p- and n-MOS transistors and 4 address bits for the lower half, 64k-bits with p- and n-MOS transistors and 8 address bits for the higher half. Each 8-bit cell is coupled to the bit lines and single supply and the device can retrieve and write data simultaneously. The device also features an auto-write protection mechanism that switches the memory cells to write mode during programming, which lets the device protect itself and the data successfully.

In conclusion, the DS1258Y-70 is a reliable, long-term memory solution that provides a high performance and an unmatched combination of features for automotive, avionics and industrial applications. Nonvolatile memory storage for critical system parameters, a low-voltage write protection feature, two range power supply and the ability to be programmed via a single 1-wire interface are some of its advantages. It is designed to withstand power-failures and withstand high shock and vibration, making it an ideal memory solution for the most demanding applications.

The specific data is subject to PDF, and the above content is for reference

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