DS1265W-100IND+ Allicdata Electronics
Allicdata Part #:

DS1265W-100IND+-ND

Manufacturer Part#:

DS1265W-100IND+

Price: $ 113.23
Product Category:

Integrated Circuits (ICs)

Manufacturer: Maxim Integrated
Short Description: IC NVSRAM 8M PARALLEL 36EDIP
More Detail: NVSRAM (Non-Volatile SRAM) Memory IC 8Mb (1M x 8) ...
DataSheet: DS1265W-100IND+ datasheetDS1265W-100IND+ Datasheet/PDF
Quantity: 1000
9 +: $ 102.93600
Stock 1000Can Ship Immediately
$ 113.23
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 8Mb (1M x 8)
Write Cycle Time - Word, Page: 100ns
Access Time: 100ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 36-DIP Module (0.600", 15.24mm)
Supplier Device Package: 36-EDIP
Base Part Number: DS1265W
Description

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DS1265W-100IND+ is a type of memory which is commonly used in a variety of applications and has been developed by Digital Signals Corporation. It is a 4-bit wide CMOS static RAM (Random Access Memory) which has been designed to provide non-volatile memory for a wide range of applications. It is commonly used in applications such as data buffering, display driver, information stores, and so on. In this article, we will discuss the application field and working principle of DS1265W-100IND+.

Application Field

DS1265W-100IND+ can be used in a wide range of applications and is suitable for both industrial and commercial use. It is particularly suitable for applications which require low power consumption, reliability and endurance. DS1265W-100IND+ is also characterized by a low standby current and is capable of maintaining data storage for up to 70 years. It is suitable for applications such as data buffering, display driver, and other uses where high reliability and endurance are important. In addition, it offers a wide industrial temperature range, making it suitable for a variety of industrial applications. It can also be used in a variety of applications in the automotive, medical, and military fields.

Working Principle

DS1265W-100IND+ is a CMOS SRAM which is designed to provide non-volatile memory for low-power applications. It is capacitively coupled, meaning that its memory cell is composed of two capacitors which hold the data. This allows for reduced power consumption and longer endurance than other types of memory. The memory cell is organized into four bits, and the data is stored in two states which correspond to the two electrodes of each cell. The data is written using a write cycle where the data is initialized, written to the cell, and then saved. The data is read using a read cycle, where the data is read from the cell, loaded into the memory register, and then output.

Overall, DS1265W-100IND+ is a type of memory which is commonly used in a variety of applications and is characterized by low power consumption and long endurance. It is suitable for a wide range of applications and is particularly suitable for industrial and commercial use. It offers a wide industrial temperature range and can maintain data storage for up to 70 years. It is composed of two capacitors which store data, and data is written and read by a write and read cycle, respectively.

The specific data is subject to PDF, and the above content is for reference

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