DS1265W-150+

Series:	--
Packaging:	Tube
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	NVSRAM
Technology:	NVSRAM (Non-Volatile SRAM)
Memory Size:	8Mb (1M x 8)
Write Cycle Time - Word, Page:	150ns
Access Time:	150ns
Memory Interface:	Parallel
Voltage - Supply:	3 V ~ 3.6 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Through Hole
Package / Case:	36-DIP Module (0.600", 15.24mm)
Supplier Device Package:	36-EDIP
Base Part Number:	DS1265W

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The DS1265W-150+ Memory

The DS1265W-150+ is a popular and widely used static random access memory, or SRAM chip. It is a type of memory which stores data using static electricity instead of electrical current, thus providing a much higher degree of operation on a much lower power budget than dynamic RAM. The DS1265W-150+ is particularly notable for its wide application range, as well as its advantageous cost/performance ratio.

Applications

The DS1265W-150+ SRAM chip is a powerful and versatile memory solution, and is capable of performing a diverse range of tasks. It is able to store up to 8,192 bits (or 1 kilobyte) of data, thus making it suitable for a range of applications including embedded systems, digital video recorders, digital radiography instruments, network home security systems, and many more. Additionally, the chip is also often used as a secondary storage device in applications where small amounts of RAM are needed, but the cost of DRAM is prohibitive or unnecessary.

Working Principle

The DS1265W-150+ static random access memory works by using two or more separate pairs of memory cells to store and retrieve data. The chip contains a data register which stores the data to be written or read, and a memory cell array. When the chip is given an address to access, a row of the cells is chosen. Each cell in the row contains a bit of data – either a "1" or a "0". This data is then stored in the data register.Depending on whether the chip is in "read" or "write" mode, that data can either be written to the cells or read from them. In "write" mode, the output data is compared to the existing data stored in the cells, and the cells are updated accordingly. In "read" mode, the data stored in the cells is transferred to the data register and sent out.

Power Consumption and Reliability

The DS1265W-150+ SRAM chip is a highly reliable device, as it is capable of operating over a wide range of temperatures without failure. It is also extremely low-power, drawing around 7 milliwatts when active, and is able to retain data in the absence of power.

Conclusion

The DS1265W-150+ is a powerful and reliable static random access memory chip, which is capable of performing a wide range of tasks in a highly efficient manner. With its compact size and low power consumption, it makes an ideal choice for a wide range of applications – and its low cost means that it can be used even in cost-sensitive projects.

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