DS2502/T&R/SL Allicdata Electronics
Allicdata Part #:

DS2502/T&R/SL-ND

Manufacturer Part#:

DS2502/T&R/SL

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Maxim Integrated
Short Description: IC EPROM 1K 1WIRE TO92-3
More Detail: EPROM - OTP Memory IC 1Kb (1K x 1) 1-Wire® 15µs T...
DataSheet: DS2502/T&R/SL datasheetDS2502/T&R/SL Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 1Kb (1K x 1)
Write Cycle Time - Word, Page: --
Access Time: 15µs
Memory Interface: 1-Wire®
Voltage - Supply: --
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: DS2502
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

In this article, we will discuss the general Memory application field and working principle of the DS2502/T&R/SL. We will first discuss the various application field that this technology is most commonly used and then explain the overall working principle.

The DS2502/T&R/SL is a non-volatile, 256-bit, read/write memory, often referred to as an EEPROM, UFI, or RFID. It is integrated with a single-bit EEPROM memory module, thus allowing for fast and reliable storage. This technology is most commonly used for RFID (Radio Frequency Identify) systems, authentication, security and data storage applications. Furthermore, these devices also have the capability of being integrated with a variety of sensor systems such as temperature, motion and pressure sensors.

As for the working principle of the DS2502 / T & R / SL, it relies on a combination of semiconductor and non-volatile memory. The technology works by reading the stored data from the non-volatile memory and then storing the contents from the non-volatile memory back into the semiconductor memory. This is done by energizing the appropriate data bits that reside on the silicon semiconductor. The size of the data bits being energized is determined by the size of the data that is being stored in the memory. This energy then causes the data bits to flip, storing the data in the semiconductor memory.

Next, the data stored in the semiconductor memory is read by energizing the appropriate data bits, which then supply the required information to the appropriate registers or memory modules. The data that is read out is then written to the non-volatile memory and stored. This way, the data is able to remain safe even in a power failure, making sure that any information that is stored is not lost. Finally, the data stored in the non-volatile memory can be read out of the device by supplying the appropriate address, data and control signals to the chip. This will then provide the information that is stored in the memory.

In summary, the DS2502/T&R/SL is an efficient, non-volatile memory that is suitable for a wide range of applications. It utilizes a combination of semiconductor and non-volatile memory and is able to store and retrieve data with the help of appropriate data bits and address signals. This device is popularly used in RFID, authentication, security and data storage applications.

The specific data is subject to PDF, and the above content is for reference

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