DSA120C150QB

Series:	--
Packaging:	Tube
Part Status:	Active
Diode Configuration:	1 Pair Common Cathode
Diode Type:	Schottky
Voltage - DC Reverse (Vr) (Max):	150V
Current - Average Rectified (Io) (per Diode):	60A
Voltage - Forward (Vf) (Max) @ If:	930mV @ 60A
Speed:	Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr:	1.8mA @ 150V
Operating Temperature - Junction:	-55°C ~ 175°C
Mounting Type:	Through Hole
Package / Case:	TO-3P-3, SC-65-3
Supplier Device Package:	TO-3P

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Diodes - Rectifiers - Arrays

DSA120C150QB is a diode rectifier array containing two independent double-sided Schottky Barrier Diodes manufactured in a standard surface-mount package. This device is designed for use as an output diode for high-voltage, high current switching power supplies. This rectifier array is suitable for both continuous-load and cycling applications, and has a low forward voltage drop of 1.2V.

Device Operation and Application

The DSA120C150QB rectifier array consists of two independent double-sided Schottky Barrier Diodes (DSBDs) in a standard surface-mount package. The DSBDs feature an extremely low forward voltage drop and low reverse leakage current. This makes the rectifier array well suited for high-voltage, high current switching power supplies.The rectifier array is typically used in high output power applications such as motor drives, industrial automation control systems, solar power systems, and high-end medical imaging systems. Its very low forward voltage drop allows for high power efficiency and reduced power dissipation in the application. The device is also suitable for use in common-mode current buffering applications.

Working Principle

When reverse biasing the DSA120C150QB rectifier array, a normally-off operation is achieved as the Schottky Barrier Diodes (DSBDs) do not allow any current flow. The reverse blocking capability of the DSBDs is due to the rectifying junction formed between the metal and the semi-insulating substrate. The depletion layer formed at the junction prevents the current from flowing in the reverse direction.In forward biasing, the DSA120C150QB rectifier array allows current to flow unrestricted through the source-drain diode junction. The forward voltage drop of the device is much lower than that of a standard diode, allowing better power efficiency and reduced power dissipation in the application. This low forward voltage drop is due to the nature of the barrier between the metal and the semi-insulating substrate.

Benefits

The DSA120C150QB rectifier array offers low forward voltage drop and low reverse leakage current, making it an ideal choice for high voltage, high current switching power supplies. The low forward voltage drop enables better power efficiency and reduced power dissipation in the application. The DSBDs also offer improved reliability due to their low reverse leakage current. This allows the device to be used in a wider range of applications. Finally, the standard surface-mount package ensures that the device is easy to install and handle.

Conclusion

The DSA120C150QB Rectifier Array is an ideal choice for a wide range of high voltage, high current switching applications. The array is composed of two independent double-sided Schottky Barrier Diodes (DSBDs) in a standard surface-mount package. The low forward voltage drop and low reverse leakage current of the device enable better power efficiency and reduced power dissipation in the application. The device is suitable for continuous-load and cycling applications and is easy to install and handle due to its standard surface-mount package.

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