Allicdata Part #: | DSA9001R0LTR-ND |
Manufacturer Part#: |
DSA9001R0L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PNP 50V 0.1A SSMINI3 |
More Detail: | Bipolar (BJT) Transistor PNP 50V 100mA 150MHz 125m... |
DataSheet: | DSA9001R0L Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 100µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 210 @ 2mA, 10V |
Power - Max: | 125mW |
Frequency - Transition: | 150MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-89, SOT-490 |
Supplier Device Package: | SSMini3-F3-B |
Base Part Number: | DSA9001 |
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Bipolar junction transistors (BJTs) are the most commonly used type of transistor. They are made up of two PN junctions and can be used to amplify or switch signals. A single BJT is composed of two sections, an emitter and a collector. DSA9001R0L is one type of single BJT device, and its application fields and working principle will be discussed in the following sections.
Features of DSA9001R0L
The DSA9001R0L is a high-speed, low-noise, PNP transistor in a standard SOT-23 package. It has excellent linearity and power dissipation, and it is also stable under high-frequency operation. The dynamics of this device have a high cutoff frequency, high transconductance, and low noise. For these reasons, this transistor is widely used for frequency-sensitive applications such as amplifiers and mixers.
Applications
DSA9001R0L is designed for a wide range of applications. It is especially suitable for automotive audio and video systems, audio amplifiers, line drivers, and buffers. It can also be used for transistor arrays, operational amplifiers and radio receivers.
Important specifications
The important specifications of DSA9001R0L includes: Collector current Ic 250mA; Collector emitter voltage Vce 50V; Collector emitter saturation voltage Vce (sat) 0.30 V; Gain Bandwidth Product fT 6.00MHz; Power Dissipation in free air Pd 250mW; DC Current Gain hfe 300-600; Operating Junction Temperature -55℃/+150℃; Maximum Junction Temperature +150℃; and Storage Temperature Range -55℃/+150℃.
Working Principle
The working principle of DSA9001R0L is based on the principle of a bipolar transistor. The device is connected in series between the power supply and the load. When current is applied to the base terminal, it allows electrons to move between the emitter and collector. This increases the current flow from the collector to the emitter, thus allowing the device to amplify or switch signals.
Conclusion
The DSA9001R0L is a single BJT device. It has a wide range of applications and excellent performance. Its features include a high cutoff frequency, high transconductance, low noise, and linearity. The working principle of this device is based on the principle of the bipolar transistor. This article discussed the features, applications, specifications, and working principle of the DSA9001R0L BJT.
The specific data is subject to PDF, and the above content is for reference
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