Allicdata Part #: | DSB5817-ND |
Manufacturer Part#: |
DSB5817 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE SCHOTTKY DO-41 |
More Detail: | Diode |
DataSheet: | DSB5817 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Part Status: | Active |
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DSB5817 Application Field and Working Principle
DSB5817 is an electronic component categorized under diodes - rectifiers - single, with an axial leaded, dual common cathode type of rectifier. It is one of the high power Schottky Barrier diodes with a maximum repetitive peak reverse voltage of up to 200V and a maximum average output current of up to 5A. With its high quality characteristics, this device makes a great choice for rectification, freewheeling, and EMI-filtering.
Application Field
DSB5817 is widely used for various applications. The most typical uses can be divided into the following three categories:
- Rectification: DSB5817 is suitable for full-wave or half-wave rectification when equipped with an inductor, like in a voltage regulator, battery charger or DC power supply.
- EMI filtering: The EMI filtering capability of DSB5817 makes it suitable for high power EMI filter in various commercial and military purposes like aircrafts and weapons systems, where it helps to minimize the EMI leakage.
- Freewheeling: When used in objects such as switched mode power supplies and SMPS, DSB5817 can serve as the freewheeling diode to protect the power source from back EMF effect.
Working Principle
The working principle of DSB5817 is based on the Schottky Barrier Effect. It also uses an axial leaded, dual common cathode configuration which allows the device to have an improved reverse blocking capability compared with other conventional diodes. The typical forward voltage of DSB5817 is 0.51V, which makes it suitable for high power applications.
When the device is subjected to a forward current, the current flow is enabled. As the forward current reaches a certain threshold, the diode will conduct, allowing electric current to pass through. At the same time, a voltage drop of 0.51V is created across the diode.
On the other hand, when a reverse current is applied to DSB5817, the high voltage across the diode will create a depletion layer at its barrier junction and prevent the current from passing through. This provides an improved reverse blocking capability, as well as the capability to be used in higher power applications.
In addition, when used as an EMI filter, the device will suppress EMI noise by providing electric current an alternate path for the electromagnetic interference signal.
Conclusion
DSB5817 is a versatile electronic component categorized under diodes - rectifiers - single, which is suitable for various applications such as rectification, freewheeling as well as EMI filtering. It is based on the Schottky Barrier effect and features a dual common cathode configuration with an improved reverse blocking capability, allowing it to be used in higher power applications.
The specific data is subject to PDF, and the above content is for reference
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