DSB5820

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The DSB5820 is a single diode rectifier designed for use in high voltage, high frequency applications. The device consists of a single mesa silicon diode and is suitable for operating at high temperatures of up to 195 C. The device is able to withstand high reverse voltages up to 1800V and currents up to 10A. The device is able to maintain a reverse breakdown voltage of 1200V at a temperature of 125C. This makes the device suitable for use in a variety of applications including power rectification, DC-DC conversion and high voltage power supplies.

The DSB5820 is designed for use in applications that require high power rectification and high efficiency. The device is designed for use in applications where the input voltage is above 800V and need to be converted to a lower voltage for use in power supplies and DC-DC converters. The device has a low forward voltage drop that ensures high efficiency, even at high currents. The device also has a low reverse leakage current, which helps keep losses low and enhances efficiency.

This device has an extremely low typical forward voltage drop, which is 1.2V at 10A. This contributes to its high efficiency and makes it a great choice for high voltage applications. The device also has an extremely low reverse leakage current of less than 1000uA at 1200V. This further enhances the efficiency of the device and helps reduce losses.

The device has a high temperature capability of up to 195C, which makes it suitable for high temperature applications such as automotive. The device also has a low reverse recovery time of only 10ns, which helps reduce losses and further enhances the efficiency of the device. The device features a low on-state resistance, which helps reduce conduction losses and improves efficiency.

The DSB5820 has a variety of features that make it suitable for a wide range of applications. The device is able to maintain a high efficiency in applications that require high power conversion. The high temperature capability and low reverse leakage current makes it an ideal choice for automotive applications. The low forward voltage drop and low on-state resistance makes the device suitable for high voltage applications. The high temperature capability and low reverse recovery time makes it an ideal choice for high frequency applications.

The working principle of the DSB5820 is based on silicon diode rectification. The device consists of a single mesa shaped silicon diode, which is capable of withstanding high reverse voltages up to 1800V and currents up to 10A. The device is able to maintain a reverse breakdown voltage of 1200V at a temperature of 125C. The device has a low forward voltage drop, which minimizes conduction losses and leads to increased efficiency. The device also has a low reverse leakage current, which further minimizes losses and helps reduce the heat generation.

The DSB5820 is an ideal choice for high voltage and high frequency applications. The device has a high temperature capability and low forward voltage drop, which helps make it a great choice for a variety of applications. The device also has a low reverse leakage current, which helps reduce losses and further enhance the efficiency of the device. The device is able to maintain a reverse breakdown voltage of 1200V at a temperature of 125C and is suitable for use in a variety of applications including power rectification, DC-DC conversion and high voltage power supplies. The working principle of the DSB5820 is based on silicon diode rectification, which helps make it a great choice for high voltage and high frequency applications.

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