DSC710100L Allicdata Electronics
Allicdata Part #:

DSC710100LTR-ND

Manufacturer Part#:

DSC710100L

Price: $ 0.18
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS NPN 80V 0.5A MINIP3
More Detail: Bipolar (BJT) Transistor NPN 80V 500mA 150MHz 1W S...
DataSheet: DSC710100L datasheetDSC710100L Datasheet/PDF
Quantity: 1000
1000 +: $ 0.16289
2000 +: $ 0.14762
5000 +: $ 0.13743
10000 +: $ 0.13574
Stock 1000Can Ship Immediately
$ 0.18
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 150mA, 10V
Power - Max: 1W
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: MiniP3-F2-B
Base Part Number: DSC7101
Description

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DSC710100L is a NPN single-ended field effect transistor (FET) manufactured by the semiconductor manufacturer Rohm. It has a high input impedance and low gate capacitance, making it an excellent choice for applications requiring large signal gain and high frequency operation. The device is widely used in power control and switching circuits due to its low power dissipation and high current gain characteristics.The DSC710100L is a depletion-mode type FET, meaning that it must be supplied with a negative gate voltage for operation. The gate is also capable of controlling the width of the channel between the source and drain terminals, allowing for the device to be used as a current amplifier. The gate voltage also determines the manner in which electrons flow through the device. By applying a positive gate voltage, electrons will flow from the source to the drain terminal, while a negative voltage will cause electrons to flow from the drain to the source.The DSC710100L has a maximum VDS of 40 volts and is rated to operate at up to 4A, making it an ideal choice for applications such as power supplies, amplifiers, and radio frequency (RF) circuits. It is also highly reliable, with a maximum dielectric strength of 5000Vrms and a maximum temperature rating of 175°C.The working principle of the DSC710100L is similar to that of a bipolar junction transistor (BJT). A small current from the gate is able to control the flow of a much larger current between the source and drain terminals. This process is the basis of the amplification achieved with this device. So by applying a voltage to the gate, the width of the channel connecting the source and drain is determined, which in turn controls the amount of current flowing from the source to the drain.The DSC710100L is a versatile device, with applications in many different fields. It is commonly used in RF applications for amplifying signals or providing switching and control functions at high frequencies; in control and power applications, such as switched-mode power supplies, motor control circuits, and power controllers; and in analog circuit applications, such as current amplifiers, linear amplifiers, and voltage regulators.In conclusion, the DSC710100L is an ideal choice for applications requiring high input impedance, low gate capacitance, and wide dynamic range. Its versatile design makes it suitable for a variety of applications, including RF, power, and analog circuits. By controlling the flow of electrons between the source and drain terminals with a gate voltage, the device is able to provide excellent gain and amplification capabilities. With its high reliability, wide operating temperature range, and maximum VDS rating of 40 volts, the DSC710100L is an invaluable component for many electronic systems.

The specific data is subject to PDF, and the above content is for reference

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