Allicdata Part #: | DSS2540M-7BDITR-ND |
Manufacturer Part#: |
DSS2540M-7B |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 40V 0.5A DFN1006-3 |
More Detail: | Bipolar (BJT) Transistor NPN 40V 500mA 300MHz 250m... |
DataSheet: | DSS2540M-7B Datasheet/PDF |
Quantity: | 10000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 150 @ 100mA, 2V |
Power - Max: | 250mW |
Frequency - Transition: | 300MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 3-UFDFN |
Supplier Device Package: | 3-DFN1006 (1.0x0.6) |
Base Part Number: | DSS2540M |
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A DSS2540M-7B is a kind of single bipolar junction transistor (BJT), a type of device that can be used to increase or decrease current and voltage. BJTs are widely used in circuits where they can be used to switch current and voltage. Unlike other types of transistors, BJTs are constructed of two P-type and one N-type semiconductor material layers. This arrangement allows the BJT to control the current flow between its electrodes. There are also other specialized BJTs, such as the Darlington transistor, which is built from two transistors. The DSS2540M-7B is a Bipolar Junction Transistor (BJT) that is commonly used in electronics.
DSS2540M-7B is mainly used in motor or motor-related systems, such as Industrial Automation, Robotics, AC Motor, and Variable Frequency Drive. It is designed for use in automotive, industrial, and consumer applications, and can handle power ratings of up to 40V and 40Amps. It can also be used in linear applications such as current sensing, voltage sensing, and motor control.
The working principle of the DSS2540M-7B is based on BJT\'s ability to amplify current, voltage, and power. It consists of three layers of semiconductor material - an N-type, a P-type and a base layer. When a voltage is applied to the base and the emitter, it causes current to flow through the transistor, which amplifies and regulates the voltage. This voltage is then regulated and passed through the collector. The DSS2540M-7B has a low collector-to-base capacitance and is designed to operate with a lower power dissipation than other wideband devices. It has a very fast switching with high frequency capabilities, making it ideal for high-speed, high-frequency applications.
Overall, the DSS2540M-7B is a high performance Bipolar Junction Transistor (BJT) suitable for use in a variety of applications requiring fast switching and high frequency capabilities, such as motor and motor-related systems. It is a single device with low collector-to-base capacitance which is designed to operate with low power dissipation and provides an amplified current, voltage, and power, while regulating and passing the voltage through the collector.
The specific data is subject to PDF, and the above content is for reference
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