
DTD523YETL Discrete Semiconductor Products |
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Allicdata Part #: | DTD523YETLTR-ND |
Manufacturer Part#: |
DTD523YETL |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS NPN 150MW EMT3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | ![]() |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | $ 0.06000 |
10 +: | $ 0.05820 |
100 +: | $ 0.05700 |
1000 +: | $ 0.05580 |
10000 +: | $ 0.05400 |
Resistor - Emitter Base (R2): | 10 kOhms |
Base Part Number: | DTD523 |
Supplier Device Package: | EMT3 |
Package / Case: | SC-75, SOT-416 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Frequency - Transition: | 260MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 5mA, 100mA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 140 @ 100mA, 2V |
Series: | -- |
Resistor - Base (R1): | 2.2 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Current - Collector (Ic) (Max): | 500mA |
Transistor Type: | NPN - Pre-Biased |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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Bipolar Junction Transistors (BJTs) are solid-state devices which can be used to amplify or switch electric current signals. The common three-terminal device has two junction terminals (the Emitter and Collector) controlling the current flow path between the two terminals called the Base. The DTD523YETL is a single, pre-biased BJT which means it is designed to operate in only one biasing direction. It is ideally suited for use in low voltage, low power ‘front end’ applications such as amplifiers, switches, filters and oscillators.
The working principle of the DTD523YETL pre-biased BJT is based on the principles of bipolar junction transistor operation. When the transistor is biased in the forward direction in a DC circuit (with appropriate biasing resistors) the base-emitter junction is forward biased, and the base-collector junction is reverse biased. The biasing of the collector-base junction is such that it is reverse biased relative to the emitter junction. This arrangement creates a depletion layer between the base and collector regions, allowing current to flow freely across the collector-base junction when a forward voltage is applied to the base terminal.
When a positive AC signal is applied to the base terminal, the forward biased depletion layerconducts current from the base to the collector. This current flow causes the collector voltage to increase and the base voltage to decrease since the base is no longer in forward bias. This change in the base voltage causes the collector current to decrease. When the base voltage goes back to its original value the collector current returns to its original value. Essentially, when a signal voltage is applied to the base, the collector current varies in proportion to the applied signal. The collector current is proportional to the base current which is in turn proportional to the simple AC signal which is being applied to the base. So, the collector current is proportional to the applied AC signal, providing the amplification.
The key advantage of the DTD523YETL pre-biased BJT is that the base voltage is pre-biased to the certain voltage level before any AC signal is applied. This results in a simplified circuit and low cost. An application which uses this type of transistor is the power FET pre-biased BJT which is used in a variety of amplifier applications as well as automotor controllers. The specific device type DTD523YETL is suited for use in low voltage, low power ‘front end’ applications such as amplifiers, switches, filters and oscillators.
In summary, the DTD523YETL is a single, pre-biased BJT which is ideally suited for use in low voltage, low power ‘front end’ applications such as amplifiers, switches, filters and oscillators. It behaves according to the principles of bipolar junction transistor operation, meaning that when a positive AC signal is applied to the base it causes the collector current to vary in proportion to the AC signal. The key advantage of this type of transistor is that the base voltage is pre-biased to the certain voltage level before any AC signal is applied, resulting in a simplified circuit and low cost.
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