DTD543XMT2L Allicdata Electronics
Allicdata Part #:

DTD543XMT2L-ND

Manufacturer Part#:

DTD543XMT2L

Price: $ 0.07
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PREBIAS NPN 150MW VMT3
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: DTD543XMT2L datasheetDTD543XMT2L Datasheet/PDF
Quantity: 1000
8000 +: $ 0.06050
Stock 1000Can Ship Immediately
$ 0.07
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Base Part Number: DTD543
Supplier Device Package: VMT3
Package / Case: SOT-723
Mounting Type: Surface Mount
Power - Max: 150mW
Frequency - Transition: 260MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Series: --
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 500mA
Transistor Type: NPN - Pre-Biased
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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DTD543XMT2L is a single pre-biased junction transistor that operates on direct current under the bipolar junction transistor family. It is a type of transistor which exhibits the unipolar characteristics of a field effect transistor, along with the bipolar characteristics of BJTs. In operation, the DTD543XMT2L is enabled by a signal which initiates a current flow through the base-emitter junction of the transistor, creating a current amplification effect in the collector-emitter circuit. When a signal is sent through the base-emitter junction, this signal is then amplified in the collector-emitter circuit as a result of the electron current flow created by the base-emitter-junction. This amplified signal is then outputted through the collector terminal. The advantages of the DTD543XMT2L are numerous, due to its low operating power, high performance, low power consumption and high temperature operation. Its pre-biased characteristics make it especially suited for applications which require a high degree of performance under stressful conditions, such as in radio frequency (RF) amplifiers, mobile base station receivers and mobile terminal applications. This device is also highly versatile, as it can also be used for other applications such as power supply monitoring, diagnosis, communications and industrial applications. Its low harmonic distortion and high power handling capabilities make it suitable for the higher power requirements of multimedia and high-speed telecommunications. The DTD543XMT2L is a current-limiting device, which can be used to control the load current in applications where there is very high voltage drop, as in motor control, or when controlling low impedance circuits. It can also be used to limit the power dissipation in applications where the device is subjected to large transients due to the high voltage profile. In conclusion, the DTD543XMT2L is a versatile and high-performing device which offers excellent temperature, low power and long-term reliability performance in a range of applications. Its pre-biased characteristics make it an ideal choice for high-performance applications demanding a robust, reliable device.

The specific data is subject to PDF, and the above content is for reference

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