
Allicdata Part #: | DTD543XMT2L-ND |
Manufacturer Part#: |
DTD543XMT2L |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS NPN 150MW VMT3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | ![]() |
Quantity: | 1000 |
8000 +: | $ 0.06050 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 140 @ 100mA, 2V |
Base Part Number: | DTD543 |
Supplier Device Package: | VMT3 |
Package / Case: | SOT-723 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Frequency - Transition: | 260MHz |
Current - Collector Cutoff (Max): | 500nA |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 5mA, 100mA |
Series: | -- |
Resistor - Emitter Base (R2): | 10 kOhms |
Resistor - Base (R1): | 4.7 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Current - Collector (Ic) (Max): | 500mA |
Transistor Type: | NPN - Pre-Biased |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
DTD543XMT2L is a single pre-biased junction transistor that operates on direct current under the bipolar junction transistor family. It is a type of transistor which exhibits the unipolar characteristics of a field effect transistor, along with the bipolar characteristics of BJTs. In operation, the DTD543XMT2L is enabled by a signal which initiates a current flow through the base-emitter junction of the transistor, creating a current amplification effect in the collector-emitter circuit. When a signal is sent through the base-emitter junction, this signal is then amplified in the collector-emitter circuit as a result of the electron current flow created by the base-emitter-junction. This amplified signal is then outputted through the collector terminal. The advantages of the DTD543XMT2L are numerous, due to its low operating power, high performance, low power consumption and high temperature operation. Its pre-biased characteristics make it especially suited for applications which require a high degree of performance under stressful conditions, such as in radio frequency (RF) amplifiers, mobile base station receivers and mobile terminal applications. This device is also highly versatile, as it can also be used for other applications such as power supply monitoring, diagnosis, communications and industrial applications. Its low harmonic distortion and high power handling capabilities make it suitable for the higher power requirements of multimedia and high-speed telecommunications. The DTD543XMT2L is a current-limiting device, which can be used to control the load current in applications where there is very high voltage drop, as in motor control, or when controlling low impedance circuits. It can also be used to limit the power dissipation in applications where the device is subjected to large transients due to the high voltage profile. In conclusion, the DTD543XMT2L is a versatile and high-performing device which offers excellent temperature, low power and long-term reliability performance in a range of applications. Its pre-biased characteristics make it an ideal choice for high-performance applications demanding a robust, reliable device.
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