DXT651-13 Discrete Semiconductor Products |
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Allicdata Part #: | DXT651-13DITR-ND |
Manufacturer Part#: |
DXT651-13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 60V 3A SOT89-3 |
More Detail: | Bipolar (BJT) Transistor NPN 60V 3A 200MHz 1W Surf... |
DataSheet: | DXT651-13 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 300mA, 3A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 500mA, 2V |
Power - Max: | 1W |
Frequency - Transition: | 200MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-243AA |
Supplier Device Package: | SOT-89-3 |
Base Part Number: | DXT651 |
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DXT651-13 is a single bipolar junction transistor (BJT). This kind of transistor is designed to work as an “active component” of an electronic system, in other words it is designed to be an inherently nonlinear device that acts to amplify and switch electrical signals. This type of BJT can be used in a wide variety of applications where its main job is to provide power or current gain. It can also be used to switch devices or control digital circuits.
The main advantage of this type of BJT over other transistors is its high current gain. This can be used to effectively increase current flow and thus increase the amount of power delivered to the circuit. Another advantage is its low power consumption, making it very energy efficient. This makes it ideal for small consumer electronics, where power efficiency is critical.
DXT651-13 BJTs have three “sections” or “terminals” that make up the device. These “sections” are the emitter, the collector and the base. The emitter is the area where current flow starts and the collector is the area to which the current flows. The base is the area between the emitter and the collector. The base is the area that is responsible for controlling the current flow.
When operating, the DXT651-13 BJT works on the principle of “minority carrier injection.” This principle works by using the base terminal to inject a small amount of “minority carriers” into the emitter and collector regions. The injected carriers create a potential difference between the emitter and the collector. This potential difference causes a change in the overall current flow between the emitter and the collector. This change in current flow is what controls the amount of power delivered to the circuit.
A major application for the DXT651-13 BJT is power amplifiers. These are used to increase the power of an electrical signal so that it can be heard through a speaker or other audio device. This type of amplifier is also commonly used in radio communication systems for transmitting signals over long distance. Other applications for the BJT include motor control, switched power supplies and voltage regulators.
The DXT651-13 BJT is a versatile transistor that is well-suited to a wide range of applications. Its main advantage is its high current gain, making it ideal for amplifiers and other devices. Its low power consumption also makes it very energy efficient and suitable for small consumer electronic devices.
The specific data is subject to PDF, and the above content is for reference
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