DXT651Q-13 Allicdata Electronics
Allicdata Part #:

DXT651Q-13-ND

Manufacturer Part#:

DXT651Q-13

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: PWR MID PERF TRANSISTOR SOT89
More Detail: Bipolar (BJT) Transistor NPN 60V 3A 140MHz 1W Surf...
DataSheet: DXT651Q-13 datasheetDXT651Q-13 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Power - Max: 1W
Frequency - Transition: 140MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89-3
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

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The DXT651Q-13 is a Single Bipolar Transistor, designed to take advantage of the state-of-the-art advances in BJT design. It is a silicon PNP device featuring a built in darlington pair that add additional gain and reduce distortion.

The DXT651Q-13 was designed for general-purpose applications, such as amplification and switching, particularly those requiring high gain and switching speed or low noise operation. It is suitable for preamplification, low and high frequency operation, and any other application where a relatively low power transistor is required.

The DXT651Q-13 provides excellent gain characteristics, good frequency stability, and low noise. It also features a low power supply voltage and low collector-to-base capacitance. This makes it an ideal device for applications such as high frequency amplifiers and wide-band switching.

The DXT651Q-13 is capable of providing a very stable performance even at high frequency, offering a cutoff frequency of up to 1 MHz with a maximum voltage of 30 volts. It is also capable of operating at temperatures ranging from -40°C to +100°C.

The DXT651Q-13 works by allowing electrons to flow freely from the emitter to the collector. When a voltage is applied, the current in the base of the transistor (the collector-emitter voltage) is multiplied by the gain and the collector current is increased accordingly. This increased current thus amplifies the signal that is fed into the base.

In addition, the DXT651Q-13 features excellent isolation, low base drive requirements, low saturation voltage, and a low minimum noise figure. It is also rated for a high current and power dissipation to ensure long term stability and dependability.

The DXT651Q-13 is a reliable device for any general-purpose amplifier application, and its high gain and low noise characteristics make it especially suitable for high-frequency applications. It also features excellent isolation, low power consumption and a wide range of operating temperatures, making it a very versatile and dependable choice.

The specific data is subject to PDF, and the above content is for reference

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