DZ23C27-HE3-18 Discrete Semiconductor Products |
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Allicdata Part #: | DZ23C27-HE3-18-ND |
Manufacturer Part#: |
DZ23C27-HE3-18 |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 27V 300MW SOT23 |
More Detail: | Zener Diode Array 1 Pair Common Cathode 27V 300mW ... |
DataSheet: | DZ23C27-HE3-18 Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
10000 +: | $ 0.02722 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Configuration: | 1 Pair Common Cathode |
Voltage - Zener (Nom) (Vz): | 27V |
Tolerance: | ±5% |
Power - Max: | 300mW |
Impedance (Max) (Zzt): | 80 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 20V |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23 |
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DZ23C27-HE3-18 Application Field and Working Principle
DZ23C27-HE3-18 is a type of diode array typically used in applications where a medium-power signal switching is required. Diode arrays, like DZ23C27-HE3-18, are made up of combinations of diodes grouped together, allowing for an efficient utilization of space and often offering additional functionality compared to an individual diode. In the case of DZ23C27-HE3-18, the array consists of three individual diodes arranged in an “H-structure”. The main benefits of using diodes in a diode array, such as DZ23C27-HE3-18, are low power signal switching and the elimination of the need for specialized or two-phase devices.
DZ23C27-HE3-18 is a diode array capable of providing low-power signal switching (defined as less than 5 A) and thus it is found in a variety of applications, including in power supplies, AC/DC converter or inverter circuits, switching regulators, and battery chargers. It is also used in the switching stages of switch-mode power supplies to reduce the amount of power dissipation in devices, as well as providing galvanic isolation. Additionally, DZ23C27-HE3-18 provides many of the same performance characteristics of more traditional silicon (p-n junction) diodes, such as resistance to reverse currents, minimal reverse voltage drop and high forward current carriers.
The working principle of diode arrays like DZ23C27-HE3-18 is similar to that of individual diodes. A diode is a two-terminal semiconductor device with an electrically positive layer on one side and a negative one on the other, allowing current to flow in only one direction. Diodes, when loaded in a diode array, act as a switch that no longer needs to be triggered separately as in a single-diode instance. The first terminal of the array connects to the cathode (negative side) of the diodes while the second one connects to the anode (positive side). When a sufficient voltage is applied, current flows through the diode array, and when this voltage drops below a certain level, the current will cease to flow. Although diode arrays offer better performance than individual diodes, they do have their drawbacks, such as increased complexity and increased costs.
In conclusion, DZ23C27-HE3-18 is an example of a diode array typically used for low-power signal switching applications. The H-structure of DZ23C27-HE3-18 allows for better switching performance and improved thermal dissipation, while still offering many of the same characteristics of its single-diode cousins. It is important to note, however, that diode arrays come with their own drawbacks, such as the need for greater understanding of circuit design and the potential for increased costs.
The specific data is subject to PDF, and the above content is for reference
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