DZ9F6V2S92-7 Allicdata Electronics
Allicdata Part #:

DZ9F6V2S92-7DITR-ND

Manufacturer Part#:

DZ9F6V2S92-7

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: DIODE ZENER 6.2V 200MW SOD923
More Detail: Zener Diode 6.2V 200mW ±5% Surface Mount SOD-923
DataSheet: DZ9F6V2S92-7 datasheetDZ9F6V2S92-7 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.03079
30000 +: $ 0.02898
50000 +: $ 0.02717
100000 +: $ 0.02409
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 6.2V
Tolerance: ±5%
Power - Max: 200mW
Impedance (Max) (Zzt): 60 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 3V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-923
Supplier Device Package: SOD-923
Description

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DZ9F6V2S92-7 is a single zener diode made by NXP Semiconductors, a leading semiconductor manufacturer. It is a planar, low power zener diode used primarily in applications requiring a low forward voltage drop and a low junction capacitance. It is designed for use at frequencies up to 1 GHz and for power levels up to 1Watts.

The DZ9F6V2S92-7 has a very low forward voltage drop of only 0.8 volts. This makes it ideal for use in applications where power consumption is an issue such as in portable equipment or battery operated devices. Its low junction capacitance provides excellent high-frequency performance, making it an ideal choice for applications involving high-speed or high-frequency signal processing.

The DZ9F6V2S92-7 has a wide range of breakdown voltages available, ranging from 5.7V to 33V. This makes it a very versatile device and suitable for many applications. It is typically used as a shunt regulator, for transient protection of circuits, clamping, and for biasing circuits. It can also be used for applications such as overvoltage and reverse voltage protection, adjustable voltage clamps, power management, and temperature compensation.

The working principle of the DZ9F6V2S92-7 is based on the Zener effect. When a reverse-biased voltage is applied across the diode, the depletion region expands and electrons tunnel across the junction. These electrons in turn create a strong electric field which causes a breakdown of the junction and currents to flow through it. The breakdown voltage is determined by the doping levels and width of the junction. As the current through the diode increases, the voltage drop across the device increases and the breakdown voltage decreases.

The DZ9F6V2S92-7 is an excellent device for use in a variety of applications and is well suited for both high frequency and low power operation. Its low forward voltage drop makes it an excellent choice for applications requiring low power consumption and for high frequency applications that require a low junction capacitance.

The specific data is subject to PDF, and the above content is for reference

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