Allicdata Part #: | DZT5551DITR-ND |
Manufacturer Part#: |
DZT5551-13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 160V 0.6A SOT-223 |
More Detail: | Bipolar (BJT) Transistor NPN 160V 600mA 300MHz 1W ... |
DataSheet: | DZT5551-13 Datasheet/PDF |
Quantity: | 12500 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 600mA |
Voltage - Collector Emitter Breakdown (Max): | 160V |
Vce Saturation (Max) @ Ib, Ic: | 200mV @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 50nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Power - Max: | 1W |
Frequency - Transition: | 300MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Base Part Number: | DZT5551 |
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The DZT5551-13 is commonly used as one of the bipolar (BJT) single transistors. It is an epitaxial type designed to meet the requirements of large-power and medium-speed switching applications. This device features excellent hFE linearity, high breakdown voltage and low saturation voltage, making it suitable for a variety of power management and other analog applications.
The DZT5551-13 is designed to function as an NPN dual collector amplifier, with a voltage breakdown of up to 50 volts and a maximum, collector current of up to 5 amps. The device\'s capabilities, small footprint and low-voltage characteristics make it suitable for a large number of applications, including power management, audio amplification, small RF circuits and more.
The DZT5551-13 is an N-channel, single-base transistor, featuring an integral base and two independent collector terminals. The transistor is designed with an N-type collector, which is used to produce an amplified output voltage and current. The transistor produces an amplified current, as the output voltage and current are related to the base current. This relationship between the collector current and the base current is referred to as the common emitter circuit.
The DZT5551-13’s working principle is based on the flow of electrons between the base and collector. When a positive voltage is applied to the base, this voltage attracts electrons from the collector. These electrons are then pushed back into the collector, creating an amplified current. When the base voltage is taken away, the electrons will cease to flow, and the device will no longer be in an active state.
The DZT5551-13’s wide variety of application fields includes power supply circuits, audio amplifiers, small RF circuits, low-voltage power management, switching applications and more. This device is commonly used in automotive, industrial and consumer applications. In automotive applications, it is used for power management in airbag systems, alarm systems and other components. It is also used in industrial applications to provide switching and power management for machines.
In consumer applications, this device is used for audio amplifier circuits with the ability to control power supply and switching, as well as motor control. It can also be used for low-voltage power management, providing power to devices like computer motherboards, circuit boards and other devices. In RF applications, this transistor is used as an amplifier to amplify weak signals and increase their gain.
The wide range of applications that the DZT5551-13 offers makes it a popular choice for many types of applications. Its features, small size and low-voltage characteristics, makes it a reliable and cost-effective choice. With its excellent hFE linearity and high breakdown voltage, users can rest assured that their applications will work as required. It is one of the most common transistors used in power management, audio amplification, small RF circuits and other applications.
The specific data is subject to PDF, and the above content is for reference
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