DZT5551Q-13 Allicdata Electronics
Allicdata Part #:

DZT5551Q-13-ND

Manufacturer Part#:

DZT5551Q-13

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN 160V 600MA SOT223
More Detail: Bipolar (BJT) Transistor NPN 160V 600mA 300MHz 2W ...
DataSheet: DZT5551Q-13 datasheetDZT5551Q-13 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Power - Max: 2W
Frequency - Transition: 300MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Description

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The DZT5551Q-13 is a single bipolar junction transistor (BJT) that is most commonly utilized in a variety of device applications. As a single component device, this transistor can be used in a wide range of device systems. This article will discuss the applications and working principles of the DZT5551Q-13.

One of the primary uses of the DZT5551Q-13 is in radio frequency amplifier circuits. This transistor can operate within the range of 10 kHz to 1 GHz, making it an ideal component for amplifier circuits. Thanks to its low noise characteristics and high gain, the DZT5551Q-13 can provide the necessary amplification for these circuits. Additionally, the use of this transistor allows for a high repetition ratethanks to their fast switch-off characteristics.

Another common use for the DZT5551Q-13 transistor is as a switch. Thanks to its high current gain, low voltages can be used to drive the transistor and turn it on or off. This makes the DZT5551Q-13 well-suited for applications in switching circuits, as the component can be controlled through a low-voltage power supply. Furthermore, this transistor can be used in analog applications such as amplifiers, voltage regulators, and battery powered circuits.

When looking at the working principle of the DZT5551Q-13, the component can be classified as a NPN transistor. As a NPN transistor, this component utilizes three terminals, or leads, for operation. The Base lead receives the input signal, and is used to activate the transistor. When a positive voltage is applied to this lead, the transistor will “open” and current will flow from from the Collector to the Emitter. Conversely, when a negative voltage is applied to this lead, the transistor will “close” and current will cease from flowing from the Collector to the Emitter.

In addition to input signals, the DZT5551Q-13 also has certain temperature operating parameters. Generally, this component will operate between -55°C and 150°C. It is important to ensure that these parameters are not exceeded, as exceeding these limits could potentially result in damage or destruction to the transistor.

The use of the DZT5551Q-13 is widespread, with applications in amplifiers, switches, signal processing, and analog components. The component is reliable, with a low noise and high gain design perfect for use in a variety of electronic systems. Its versatility, high current gain, and low input voltage requirements make it an ideal choice for many circuits. Thus, the DZT5551Q-13 is an effective single bipolar junction transistor capable of powering modern systems.

The specific data is subject to PDF, and the above content is for reference

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