DZTA42-13 Discrete Semiconductor Products |
|
Allicdata Part #: | DZTA42DITR-ND |
Manufacturer Part#: |
DZTA42-13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS NPN 300V 0.5A SOT-223 |
More Detail: | Bipolar (BJT) Transistor NPN 300V 500mA 50MHz 1W S... |
DataSheet: | DZTA42-13 Datasheet/PDF |
Quantity: | 20000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 300V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 2mA, 20mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 30mA, 10V |
Power - Max: | 1W |
Frequency - Transition: | 50MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Base Part Number: | DZTA42 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
。Bipolar Junction Transistors (BJT) are essential elements in many integrated circuits and other types of electronic devices. Among them is the DZTA42-13, a single junction transistor that can be used in a variety of applications. This semiconductor is particularly useful for RF applications due to its high-power, low-voltage capabilities.
The DZTA42-13 is a n-p-n type junction transistor, meaning that it is composed of three layers: one n-type (negative) layer, one p-type (positive) layer, and a middle layer composed of both n-type and p-type materials. This three-layered structure allows the device to operate at much higher frequencies than other single junction transistors. This is a significant benefit, as many applications in RF technology operate on small but fast frequencies.
The DZTA42-13 is an enhancement-mode device, meaning that it can operate normally when no input signal is applied. The input signal will create a current channel in the base-emitter junction, allowing current flow from the base to the collector, and then to the emitter. This type of transistor requires a small current on the input to be effectively driven, so it can be used in applications with very low power consumption. As an added bonus, the transistor\'s high-power capabilities allow it to address higher powers in its applications.
Because of its unique two-layer structure and high-power capabilities, the DZTA42-13 can be used in a variety of applications such as audio amplifiers, radio frequency amplifiers, power convertor circuits, microwave communications circuits, and switching circuits. These applications are characterized by their need for high frequency response, a relatively low amount of power consumption, and the ability to switch quickly and reliably.
The DZTA42-13 is designed to be extremely reliable, operating from -55°C to +125°C. This temperature range allows the transistor to operate in a variety of electronic applications, and its extreme durability also makes it suitable for use in military, aerospace, and medical applications.
In summary, the DZTA42-13 is a single bipolar junction transistor that is designed for a variety of electronic and RF applications. It features a two-layer structure and a wide operating temperature range, and its high-power, low-voltage capabilities make it an ideal choice for many applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
DZTA92-13 | Diodes Incor... | -- | 1000 | TRANS PNP 300V 0.5A SOT-2... |
DZTA42Q-13 | Diodes Incor... | -- | 1000 | TRANS NPN 300V 500MA SOT2... |
DZTA42-13 | Diodes Incor... | -- | 20000 | TRANS NPN 300V 0.5A SOT-2... |
GENERAL-PURPOSE TRANSISTORBipolar (BJT) ...
TRANS PNP DARL 30A 120V DIEBipolar (BJT)...
TRANS PNP DARLINGTON DIEBipolar (BJT) Tr...
TRANS GENERAL PURPOSE TO-218Bipolar (BJT...
TRANS PNP 140V 1ABipolar (BJT) Transisto...
TRANS NPN 700V 3A I2PAKBipolar (BJT) Tra...