DZTA42-13 Allicdata Electronics

DZTA42-13 Discrete Semiconductor Products

Allicdata Part #:

DZTA42DITR-ND

Manufacturer Part#:

DZTA42-13

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN 300V 0.5A SOT-223
More Detail: Bipolar (BJT) Transistor NPN 300V 500mA 50MHz 1W S...
DataSheet: DZTA42-13 datasheetDZTA42-13 Datasheet/PDF
Quantity: 20000
Stock 20000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Power - Max: 1W
Frequency - Transition: 50MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Base Part Number: DZTA42
Description

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Bipolar Junction Transistors (BJT) are essential elements in many integrated circuits and other types of electronic devices. Among them is the DZTA42-13, a single junction transistor that can be used in a variety of applications. This semiconductor is particularly useful for RF applications due to its high-power, low-voltage capabilities.

The DZTA42-13 is a n-p-n type junction transistor, meaning that it is composed of three layers: one n-type (negative) layer, one p-type (positive) layer, and a middle layer composed of both n-type and p-type materials. This three-layered structure allows the device to operate at much higher frequencies than other single junction transistors. This is a significant benefit, as many applications in RF technology operate on small but fast frequencies.

The DZTA42-13 is an enhancement-mode device, meaning that it can operate normally when no input signal is applied. The input signal will create a current channel in the base-emitter junction, allowing current flow from the base to the collector, and then to the emitter. This type of transistor requires a small current on the input to be effectively driven, so it can be used in applications with very low power consumption. As an added bonus, the transistor\'s high-power capabilities allow it to address higher powers in its applications.

Because of its unique two-layer structure and high-power capabilities, the DZTA42-13 can be used in a variety of applications such as audio amplifiers, radio frequency amplifiers, power convertor circuits, microwave communications circuits, and switching circuits. These applications are characterized by their need for high frequency response, a relatively low amount of power consumption, and the ability to switch quickly and reliably.

The DZTA42-13 is designed to be extremely reliable, operating from -55°C to +125°C. This temperature range allows the transistor to operate in a variety of electronic applications, and its extreme durability also makes it suitable for use in military, aerospace, and medical applications.

In summary, the DZTA42-13 is a single bipolar junction transistor that is designed for a variety of electronic and RF applications. It features a two-layer structure and a wide operating temperature range, and its high-power, low-voltage capabilities make it an ideal choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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