DZTA42Q-13

The DZTA42Q-13 is a transistor that belongs to the Transistors - Bipolar (BJT) - Single family. It is designed for high power output applications, as well as for power amplifier design, radio frequency (RF) and general purpose applications.

The DZTA42Q-13 utilizes a Collector-Emitter breakdown voltage (Vceo) of 130V, a Collector-Base breakdown voltage (Vcbo) of 140V and a maximum emitter (Base) voltage (Vebo) of 5V. It is capable of high total power dissipation of up to 5 watts. The saturation voltage (Vcesat) is rated at 0.2V.

The transistor also has a maximum gain (hfe) of 1500, a band-width of 80MHz, and a current capability of 12A, making it suitable for high power output applications.

The DZTA42Q-13 is essentially a NPN transistor, meaning it consists of three regions. The Base region conducts carriers from the Emitter to the Collector port, thus allowing current to flow between the Emitter and Collector. Depending on the current passing through the Base region, either an NPN transistor or a PNP transistor can be formed.

The DZTA42Q-13 is an NPN transistor, meaning that it is made up of three layers of semiconductor material. This three-layered semiconductor consists of the Emitter, Base, and Collector layers. The Emitter is a layer of highly doped (negative) n-type semiconductor material that is used to inject minority carriers, or electron holes, into the Base region. The Base region is a thin layer of lightly doped (positive) n-type semiconductor material. The Base region contains the majority carriers, electrons, which are injected into the Emitter region.

The Collector is the third layer of heavily doped (positive) n-type semiconductor material. When the positive voltage is applied to the Base terminals of the DZTA42Q-13, the electrons in the Base region are attracted to the positive Base terminal. This creates an electric field across the Base region, which causes the electrons from the Emitter region to be pushed outward into the Collector region.

The electric field created in the Base region also creates a region of depletion or a potential barrier, which prevents current from flowing between the Emitter and Collector regions until the Base current is sufficiently high to overcome this potential barrier. This is known as biasing the transistor, and is essential for proper operation of the DZTA42Q-13.

The DZTA42Q-13 is manufactured using advanced semiconductor technology, making it well suited for a variety of high-power applications, from power amplifier design to RF applications. Its high power capabilities and high gain make it an ideal choice for high current driving and switching applications.