Allicdata Part #: | 1080-1535-2-ND |
Manufacturer Part#: |
EAPSV3026A0 |
Price: | $ 0.13 |
Product Category: | Sensors, Transducers |
Manufacturer: | Everlight Electronics Co Ltd |
Short Description: | PHOTOTRANSISTOR IR DETECTOR 940N |
More Detail: | Phototransistor 940nm Top View 2-SMD, No Lead |
DataSheet: | EAPSV3026A0 Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.11504 |
3000 +: | $ 0.10395 |
7500 +: | $ 0.09702 |
10500 +: | $ 0.09356 |
37500 +: | $ 0.09217 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Current - Collector (Ic) (Max): | 20mA |
Current - Dark (Id) (Max): | 100nA |
Wavelength: | 940nm |
Viewing Angle: | 35° |
Power - Max: | 75mW |
Mounting Type: | Surface Mount |
Orientation: | Top View |
Operating Temperature: | -25°C ~ 85°C (TA) |
Package / Case: | 2-SMD, No Lead |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Optical sensors are a type of sensor that use light for the purposes of detection and monitoring. Among these, phototransistors are widely used for a variety of applications including medical imaging, computer vision, and robotics. The EAPSV3026A0 is an NPN silicon phototransistor, with enhanced performance optimized for use in industrial and automotive applications.
The EAPSV3026A0 is a hermetically sealed device featuring a fast response time and wide visible light spectrum coverage. Designed for direct PCB mounting, the EAPSV3026A0phototransistor has an operation voltage ranging between 0.3 mA to 1.2 mA, and can operate in temperatures up to 85°C. Compared to other NPN phototransistors, the EAPSV3026A0 offers a superior combination of high sensitivity, temperature stability and reliability.
The EAPSV3026A0’s most popular application is in automotive lighting for head lamps, taillights, and stop lights. A shortened response time increases the efficiency and effectiveness of the lighting system, allowing for an earlier response to external stimuli – such as changing the light intensity when passing through a tunnel or detecting a rear-ending vehicle. Its hermetically sealed package is also well-suited for automotive applications where long-term durability and waterproofing resistance is essential.
The EAPSV3026A0 is also used for various security and alarm systems. By detecting a wide spectrum of light, it can be used in anti-theft detection systems, motion sensors in office buildings, and other automated warning systems. The EAPSV3026A0’s quick response time allows it to accurately detect and respond to movement, allowing for more effective and reliable alarm systems.
The phototransistor’s working principle is based on the photoelectric effect. In this phenomenon, light is absorbed by the transistor’s semiconductor material, which then generates electrical current and produces a signal that can be measured. As the intensity of the incident light increases, it will increase the current flow, creating a proportional response. This principle is used in the EAPSV3026A0 phototransistor to detect and respond to changes in light intensity.
In conclusion, the EAPSV3026A0 is a hermetically sealed NPN silicon phototransistor designed for use in a variety of industrial and automotive applications. It is most commonly used in automotive lighting for head lamps, taillights, and stop lights, as well as in security and alarm systems. This phototransistor’s working principle is based on the photoelectric effect, which allows it to detect and respond to changes in light intensity.
The specific data is subject to PDF, and the above content is for reference
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