EAPSY2520A2 Allicdata Electronics
Allicdata Part #:

EAPSY2520A2-ND

Manufacturer Part#:

EAPSY2520A2

Price: $ 0.06
Product Category:

Sensors, Transducers

Manufacturer: Everlight Electronics Co Ltd
Short Description: DETECTOR SUBMINIATURE T 3/4
More Detail: Phototransistor 940nm Top View 2-SMD
DataSheet: EAPSY2520A2 datasheetEAPSY2520A2 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.05443
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 30V
Current - Collector (Ic) (Max): 20mA
Current - Dark (Id) (Max): 100nA
Wavelength: 940nm
Viewing Angle: --
Power - Max: 75mW
Mounting Type: Surface Mount
Orientation: Top View
Operating Temperature: -25°C ~ 85°C (TA)
Package / Case: 2-SMD
Description

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Optical Sensors - Phototransistors are widely used in many applications such as robots, security systems, motion detectors, and environmental monitoring. The EAPSY2520A2 Phototransistor, a popular phototransistor from e2v Corporation, is a three-terminal optoelectronic device that uses light, infrared, ultraviolet, or visible radiation to detect and control the flow of electrical current.

Phototransistors are discrete components designed to be used as part of an external optical sensing circuit. The EAPSY2520A2 Phototransistor uses a built-in light-detecting element to sense and convert light into a proportional electrical current. Phototransistors involve the flow of a small current, usually between 0.10 mA and 2 mA, which is proportional to the amount of light that is detected.

The EAPSY2520A2 Phototransistor is an NPN type device with a near-infrared sensing range from 850 nm to 1000 nm. The device is housed in a 3mm plastic through-hole package and provides a maximum supply voltage of 30V and a maximum collector-emitter voltage of 15V. The maximum power dissipation of the device is 250mW and the minimum dark current is 0.5 uA. EAPSY2520A2 Phototransistors have a typical collector-emitter saturation voltage of 0.3V and a typical carrier transit time of 10ns.

The typical application for the EAPSY2520A2 Phototransistor includes current-to-voltage conversion, transmissive optical sensing, and photo interrupts. For current-to-voltage conversion, the device is used to convert low level IR irradiances into uV that can then be measured by other electronic components. For transmissive optical sensing, the phototransistor is used as a switch which is triggered when light is detected. For photo interrupts, the phototransistor is used as a circuit breaker when light is detected.

In terms of working principle, the EAPSY2520A2 Phototransistor works by creating an electrical current when exposed to light. The light activates the base-emitter junction of the transistor, allowing the collector-emitter current to flow. This flow of current is proportional to the amount of light that is detected and is used to calculate the intensity of the incident light. The phototransistor is a three-terminal optoelectronic device with an emitter, a base, and a collector. Light is directed through the transparent package at the photosensitive base which, when sufficient light is incident to the photosensitive area, will emit a photocurrent.

The EAPSY2520A2 Phototransistor is one of the most popular and versatile phototransistors on the market and is well-suited for a variety of applications. Its wide range of permissible supply voltages and carriertransit time makes it an excellent choice for a range of light-detection projects. With the ability to respond to low level IR irradiances and a small dark current, the device is optimal for both transient optical sensing and photo interrupts. The EAPSY2520A2 Phototransistor is a versatile and easy-to-use device that is well-suited to a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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