Allicdata Part #: | EAPSZ2520A1-ND |
Manufacturer Part#: |
EAPSZ2520A1 |
Price: | $ 0.06 |
Product Category: | Sensors, Transducers |
Manufacturer: | Everlight Electronics Co Ltd |
Short Description: | DETECTOR SUBMINIATURE T 3/4 |
More Detail: | Phototransistor 940nm Top View 2-SMD |
DataSheet: | EAPSZ2520A1 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.05418 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Current - Collector (Ic) (Max): | 20mA |
Current - Dark (Id) (Max): | 100nA |
Wavelength: | 940nm |
Viewing Angle: | -- |
Power - Max: | 75mW |
Mounting Type: | Surface Mount |
Orientation: | Top View |
Operating Temperature: | -25°C ~ 85°C (TA) |
Package / Case: | 2-SMD |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Optical Sensors - Phototransistors can be used to detect light over a wide range of wavelengths and amplifying the corresponding electrical signal when exposed to light. The EAPSZ2520A1 is one of the most commonly used phototransistors for this task. It is a PN-junction photodioide integrated into a single compact module, designed for use in medium powered signals.
The EAPSZ2520A1 is ideal for use in a wide range of applications as it offers a superior level of performance compared to other similar phototransistors. In particular, it is highly effective for low power, fast-response signal detection. It also has a high detection efficiency even at small light levels, and it is also highly resistant to temperature changes making it suitable for many non-invasive sensing applications. In addition, the phototransistor has high immunity to electrical noise which makes it an excellent choice for both commercial and industrial applications.
The working principle of the EAPSZ2520A1 is based on the photovoltaic effect. When a photon is incident on a PN-junction photodioide, it will generate an electron-hole pair, which is known as the photoelectric effect. This pair is then transported across the PN-junction and when it reaches the terminal it produces a current. When the phototransistor is exposed to light, the PN-junction between the electrodes is illuminated, and this produces an electrical current, which is then amplified by the circuit connected to the phototransistor. This amplified current is then used as a signal for the application.
The EAPSZ2520A1 is particularly suited for use in harsh industrial environments as it is immune to temperature changes and also has a high immunity to electrical noise. Its applications include motion detection, level detection, presence detection and ambient light sensing. It can also be used in medical devices for measuring a patient’s pulse rate or respiration rate. In addition, it is also used in security systems, optical communications and for data transmission and reception. The EAPSZ2520A1 can also be useful in engineering fields such as automobile, building and machine inspection, as well as for automated manufacturing line control.
The EAPSZ2520A1 is an extremely useful and reliable phototransistor for a variety of sensing applications. It is highly efficient and resistant to noise; making it a superior choice for both low power and fast-response signals. It has a wide range of applications and is particularly suited for use in harsh environments due to its ability to resist temperature changes and its good noise immunity. All these advantages make the EAPSZ2520A1 an excellent choice for sensing applications in the industrial, medical, security, and engineering fields.
The specific data is subject to PDF, and the above content is for reference
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