Output Type:	Transistor with Base
Supplier Device Package:	8-SOP
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 110°C
Vce Saturation (Max):	400mV
Current - DC Forward (If) (Max):	60mA
Voltage - Forward (Vf) (Typ):	1.3V
Current - Output / Channel:	--
Voltage - Output (Max):	80V
Series:	--
Input Type:	DC
Rise / Fall Time (Typ):	1.6µs, 2.2µs
Turn On / Turn Off Time (Typ):	3µs, 3µs
Current Transfer Ratio (Max):	--
Current Transfer Ratio (Min):	20% @ 1mA
Voltage - Isolation:	3750Vrms
Number of Channels:	1
Part Status:	Active
Packaging:	Tube

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EL215-V Application Field and Working Principle

The EL215-V is an optoisolator designed specifically for use in high voltage applications, offering a higher-than-average isolation voltage and excellent performance in wide temperature operating range. Its physical form factor is designed to be convenient for efficient mounting and hot-swap capability in the confined space of an electronic device. This optoisolator is the ideal choice for applications using higher currents and high voltages such as power and motor loads.The EL215-V optoisolator is based on the traditional transistor-photovoltaic output design and utilizes an infra-red emitting diode (IRED) optical source and a phototransistor light sensor to achieve electrical insulation between circuits. The IRED emits a highly reliable, low-power infrared light beam and the phototransistor detector receives this light and transforms it into electrical current, allowing the circuit to be insulated from the input AC or DC current but still control the output. The dimensions of the EL215-V are configured in a 2.50 mm x 2.30 mm surface mount package, making it easy to mount in most electronic devices.The operation of the EL215-V optoisolator can be explained by breaking down the individual components and describing how they interact with one another. As previously mentioned, the infrared emitting diode (IRED) is the first part of the optoisolator and creates a light source by passing current through the device. This source of light is then picked up by the phototransistor detector, which is the second component. The detector creates the control of the output by transforming the light into electrical current. As the phototransistor detects the light, it emits a voltage proportional to the strength of the light, and this is used to control the output.Finally, the output circuit of the EL215-V consists of a NPN transistor, which is connected to the control circuit. This transistor amplifies the current signal that is generated by the phototransistor in order to control the output. The phototransistor detector is connected between the IRED and the NPN transistor, allowing the collector current of the transistor to be modulated by the current of the phototransistor. The EL215-V also offers a high isolation voltage of 4000V, which prevents electrical noise across the input and output circuits and increases its performance in high voltage applications.Overall, the EL215-V optoisolator is a reliable and powerful high voltage solution for a wide range of applications. Its small size and first-class insulation make it an ideal choice for applications where space is limited. The technology of infrared radiation and phototransistor detector also makes it a reliable and safe component in any electronic device. Its highly reliable performance and superior electrical insulation provide a robust solution for applications using AC or DC levels of higher voltages.

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