EL814S1(TB)-V Allicdata Electronics
Allicdata Part #:

EL814S1(TB)-V-ND

Manufacturer Part#:

EL814S1(TB)-V

Price: $ 0.00
Product Category:

Isolators

Manufacturer: Everlight Electronics Co Ltd
Short Description: OPTOISOLTR 5KV TRANSISTOR 4-SMD
More Detail: Optoisolator Transistor Output 5000Vrms 1 Channel ...
DataSheet: EL814S1(TB)-V datasheetEL814S1(TB)-V Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Output Type: Transistor
Supplier Device Package: 4-SMD
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Vce Saturation (Max): 200mV
Current - DC Forward (If) (Max): 60mA
Voltage - Forward (Vf) (Typ): 1.2V
Current - Output / Channel: --
Voltage - Output (Max): 80V
Series: --
Input Type: AC, DC
Rise / Fall Time (Typ): 7µs, 11µs
Turn On / Turn Off Time (Typ): --
Current Transfer Ratio (Max): 300% @ 1mA
Current Transfer Ratio (Min): 20% @ 1mA
Voltage - Isolation: 5000Vrms
Number of Channels: 1
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR) 
Description

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Optoisolators, the name itself suggests that these components, commonly used in electronic circuits, are responsible for isolating two electrical assets. Transistor Photovoltaic Output (TPAObject) is a type of optoisolator which uses a light emitting diode (LED) as the input side and phototransistor as the output side. In this article we will try to explore the application field and working principle of EL814S1 (TB)-V TPAObject.

The main application of EL814S1 (TB)-V TPAObject is to isolate and protect the signal referenced within the circuit in order to reduce the rate of electrical noise. It can be used as an emulator or even as a sensing device. This optimum device exactly fits in varieties of circuits where higher level of isolation is demanded. The outstanding feature of this device is that it supports to withstand a wide range of voltage. For instance, the voltage from 5V up to 400V can be applied here to get the desired accuracy.

Now let us try to understand the working principle of EL814S1 (TB)-V TPAObject. This device is mainly composed of two terminal, one LED light emitting diode and one phototransistor. The LED light emitting diode is responsible for converting the electrical signal into light pulses and sending them across the insulation material. Whereas the phototransistor is designed to convert this light into electrical signal and amplifying them up to the desired level. The amount of amplification is affected by the amount of applied voltage.

In addition to this, EL814S1 (TB)-V TPAObject is embedded with two protective circuitry, one in the LED and another in the phototransistor side. The main function of these protective circuitries is to prevent the circuit from getting short circuit and excess current. Due to this protective feature, the device become more reliable and can withstand a wide range of voltage.

Another remarkable feature of EL814S1 (TB)-V TPAObject is its low current consumption, studies shows that this device drains only around a quarter milliamp of current in average. This feature is hugely beneficial in mobile device industry where power saving is a great concern. On the other hand, the low current consumption has some drawbacks too, for instance, this device may not be suitable for high power applications.

Finally, it can be concluded that EL814S1 (TB)-V TPAObject is a great optoisolator for those applications where higher level of isolation is needed. This device is embedded with some outstanding features like low current consumption and protective circuitry. Although it does not support high power application, this device can withstand a wide voltage range and is suitable for medium applications.

The specific data is subject to PDF, and the above content is for reference

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