Allicdata Part #: | EM6M2T2RTR-ND |
Manufacturer Part#: |
EM6M2T2R |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N/P-CH 20V 0.2A EMT6 |
More Detail: | Mosfet Array N and P-Channel 20V 200mA 150mW Surfa... |
DataSheet: | EM6M2T2R Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 1mA |
Base Part Number: | *M2 |
Supplier Device Package: | EMT6 |
Package / Case: | SOT-563, SOT-666 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power - Max: | 150mW |
Input Capacitance (Ciss) (Max) @ Vds: | 25pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1 Ohm @ 200mA, 4V |
Current - Continuous Drain (Id) @ 25°C: | 200mA |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Logic Level Gate |
FET Type: | N and P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The EM6M2T2R is a power transistor array designed as a single solution to a number of complex electronic circuit applications. Designed to work with low voltage inputs, it enables simple control of complex, high power systems. It is a powerful device that combines the advantages of both FETs and MOSFETs in one package.
The EM6M2T2R features six Field Effect Transistors (FETs), two Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) and two Resistors. These integrated circuit components are combined in an isolated configuration, allowing for a wide range of applications, from high voltage and high current to low voltage and low current.
The FETs in the EM6M2T2R run on a small current and enable the device to switch quickly between high current and low current states, making it ideal for operating high-powered devices and circuits with precision control. On the other hand, the MOSFETs enable the device to handle current up to the maximum drain-source voltage rating without excessive interference.
The two resistors in the EM6M2T2R also function as a voltage divider, which allows the device to scale the voltage between its input and output. This allows for a much wider range of applications.
In addition, the EM6M2T2R features a low input loss that helps to protect against overheating and keeps the circuit running efficiently. It also operates over a wide temperature range and can be used in a variety of environments.
When it comes to its application field, the EM6M2T2R is used in a variety of applications, from automotive electronics and medical imaging to industrial control and communications systems. It is also used for tasks such as motor control, signal conversion, and switch controlling.
In terms of its working principle, the EM6M2T2R utilizes a simple two-step process. It begins by triggering the FETs to switch, then activating the MOSFETs to control the current across the load. This process allows the device to control the current precisely, while protecting against damage or interference caused by variations in the load.
The EM6M2T2R is designed to work reliably and efficiently over a wide voltage range, ensuring it can handle high power levels without any problems. It is also designed with low power consumption, making it a great choice for applications that require a low power profile.
In summary, the EM6M2T2R is a highly efficient transistor array that combines the advantages of both FETs and MOSFETs in one package. It is used across a wide variety of applications, from automotive and medical to industrial and communications systems. Its working principle utilizes a two-step process to control current precisely, while also protecting against damage or interference.
The specific data is subject to PDF, and the above content is for reference
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