EMA5T2R Allicdata Electronics

EMA5T2R Discrete Semiconductor Products

Allicdata Part #:

EMA5T2RTR-ND

Manufacturer Part#:

EMA5T2R

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS 2PNP PREBIAS 0.15W EMT5
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi...
DataSheet: EMA5T2R datasheetEMA5T2R Datasheet/PDF
Quantity: 1000
8000 +: $ 0.04275
16000 +: $ 0.03800
24000 +: $ 0.03562
56000 +: $ 0.03166
Stock 1000Can Ship Immediately
$ 0.05
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Base Part Number: MA5
Supplier Device Package: EMT5
Package / Case: 6-SMD (5 Leads), Flat Lead
Mounting Type: Surface Mount
Power - Max: 150mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Series: --
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 2.2 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 PNP - Pre-Biased (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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A pre-biased EMA5T2R is an array of transistors that combines into a single package several semiconductor elements on a single chip for the purpose of providing better performance. This combination of transistors is commonly used in high-speed logic circuits, switching, and power amplifier applications. It is also used in high precision circuits requiring very high levels of control over the voltage, current, and power characteristics.

The pre-biased EMA5T2R array consists of four transistors of type NPN, configured in a Darlington array. This allows high current gain and stability of the high-frequency performance in all kinds of circuits. The devices are pre-biased by means of a resistor bias voltage. This voltage is used for the base turn-on of the devices and creates a balanced input impedance at the input of the Darlington array. A bias voltage exists between the emitter and collector of each of the NPN transistors, so the output of the array is balanced and the current gain of the array is maximized.

The working principle of the pre-biased EMA5T2R array is based on the current passing through the resistor network of the array. When the transistors are switched on, the resistors act as current limiters and the transistor current flows through the resistors. The transistor current is then increased in steps according to the applied voltage level. The voltage input to the transistor base is determined by the collector current, which determines the amount of current flowing through the entire array. The array is designed to maintain the voltage applied to the base at a constant level to ensure optimum performance.

The pre-biased EMA5T2R array has a wide range of applications in switching, logic, and power amplifiers in both analog and digital circuits. These arrays are widely used in telecommunication, automotive, industrial, and consumer electronics applications. They can also be used in avionics, medical, and military applications due to their superior performance. The array has also been successfully used in various high-speed data acquisition and display applications.

The pre-biased EMA5T2R array is a valuable tool for designing high-speed and efficient circuits. Its combination of integrated semiconductor elements allows for robust and reliable circuit designs. Its excellent performance characteristics makes it suitable for a wide range of applications in electronics systems where high current gain and low power dissipation are desired. Using these arrays, designers can create circuits with improved performance and cost savings.

The specific data is subject to PDF, and the above content is for reference

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