EMB10T2R Allicdata Electronics
Allicdata Part #:

EMB10T2RTR-ND

Manufacturer Part#:

EMB10T2R

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS 2PNP PREBIAS 0.15W EMT6
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi...
DataSheet: EMB10T2R datasheetEMB10T2R Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Base Part Number: MB10
Supplier Device Package: EMT6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Power - Max: 150mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Series: --
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 2.2 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 PNP - Pre-Biased (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The EMB10T2R is a type of pre-biased array of transistors, which are themselves known as Bipolar Junction Transistors (BJT). In order for a transistor to operate and transfer electrical current, it must be biased. Pre-biasing is an important process in which the Q-points of the transistor be selected and set before the application of an AC signal or the power supply voltage. Pre-biased arrays are used widely in the industry to provide a quick, cost-effective way to construct large-scale transistor projects.

The basic structure of the EMB10T2R is as follows: Each unit consists of 8 transistors in a total of four columns and two rows. The transistors are connected in series and can be configured in either a n-p-n or p-n-p type. The columns are connected to the power supply voltage, while the rows are connected to ground. The transistors are then connected to one another through a capacitor, which is connected to the Q-point bias line.

The working principle of the EMB10T2R depends on the configuration of the transistor connections. When the input signal is applied, the bias line is used to control the relative voltages between the columns and to switch between low and high power, as well as to select the appropriate operating point. Depending on the level of the input signal, the operating point of each transistor can be changed and thus, increase or decrease the current that can be supplied. The bias line also operates as a feedback system, ensuring that the transistor remains in its set operating point even as the power supply voltage is altered.

The EMB10T2R is commonly used in applications such as analog, power computing, audio, video and other signal processing. By using the pre-biased array, an increased switching speed can be obtained and is less susceptible to noise and electromagnetic interference (EMI). Furthermore, the transistors can be arranged in a symmetric formation, thus providing a consistent signal throughout the array. This makes the EMB10T2R a popular choice for applications that require low power operation, such as in low power gaming consoles or medical devices.

The EMB10T2R pre-biased array can be used in different types of projects and applications, as it offers a cost-effective solution to large-scale transistor needs. Its basic structure and working principle make it suitable for a wide range of applications, making it an excellent choice for the development of a variety of electronics. Its flexibility, reliability and affordability make it an attractive choice for many designers and engineers.

The specific data is subject to PDF, and the above content is for reference

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