EMB3T2R

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The EMB3T2R is a type of pre-biased bipolar transistor array, composed of two transistors, which offers exceptional performance in a wide range of applications. It is a three-terminal device that provides superior linearity, very low power consumption and excellent thermal performance, making it ideal for use in both linear and cellular applications.

At the heart of the EMB3T2R is a differential amplifier topology which, when combined with their complementary n- and p-channel transistor, can act as either a voltage amplifier or an operational amplifier. It provides excellent linearity and faithful signal reproduction, making it ideal for applications such as power amplifiers, power converters, instrumentation amplifiers, signal processing and audio amplifiers.

The EMB3T2R also features a built-in bias generator for its base-emitter junction, which provides stable quiescent operation over temperature extremes. This ensures that the device can maintain its linearity and faithful signal reproduction, even at the extremes of its operating conditions. Additionally, the generator helps in minimizing the load placed on the external power supply, resulting in improved system efficiency.

As a pre-biased bipolar transistor array, the EMB3T2R provides superior thermal performance and extremely low power consumption. It is capable of operating in temperatures as low as -55°C and as high as 175°C, with a power dissipation as low as 8 mW/channel. This makes it suitable for many applications in high-temperature and low-power environments.

The EMB3T2R also offers high gain and excellent precision. This means that the device is ideal for use in low power systems, where it can achieve a high signal-to-noise ratio and reduce overall system noise. Additionally, its wide bandwidth ensures that it can provide excellent performance even in signal processing applications that require high signal frequencies.

Overall, the EMB3T2R is an exceptional bipolar transistor array that provides superior performance in a range of demanding applications. Its wide operating temperature range, low power consumption, high gain and excellent linearity makes it suitable for use in both linear and cellular applications. Its differential amplifier topology, combined with its on-chip bias generator, further expands its performance by providing superior thermal performance, extended frequency response and improved system efficiency.

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