EMB4T2R

DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 1mA, 5V
Base Part Number:	MB4
Supplier Device Package:	EMT6
Package / Case:	SOT-563, SOT-666
Mounting Type:	Surface Mount
Power - Max:	150mW
Frequency - Transition:	250MHz
Current - Collector Cutoff (Max):	--
Vce Saturation (Max) @ Ib, Ic:	300mV @ 1mA, 10mA
Series:	--
Resistor - Emitter Base (R2):	--
Resistor - Base (R1):	10 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	2 PNP - Pre-Biased (Dual)
Part Status:	Active
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

<p>EMB4T2R is a family of pre-biased complementary emitter-base four-terminal transistors (EB4T2Rs) designed for use in analog and mixed-signal applications where high power density, low power consumption and robust reliable operation are required.</p><p>The family includes an array of three EB4T2Rs with individual gates that are normally biased by an off-chip voltage source. The EMB4T2Rs are designed for use in analog applications for RF and digital switching, rectification and level shifters. The devices feature a wide variety of on-resistance ratings from sub-milliohms to near zero ohms and are constructed using advanced processes and materials to ensure reliable performance.</p><p>EMB4T2Rs are pre-biased components and by definition, the base and emitter current bias connections are perturbed at their source, either externally or by an internal source. Additionally, biasing the components to their appropriate operating points requires special consideration of temperature, current, and power dissipation variables.</p><p>For example, setting the biases on multiple transistors in a common bus architecture (where multiple gate pins are externally connected together) requires circuit design considerations to ensure that the appropriate gate voltage and current bias is maintained. When biasing multiple components, the combined current drive must be considered to meet the circuit specifications.</p><p>The operating principle of the EMB4T2R is based on the basic BJT theory - controlling the collector current flow from the base by controlling the base current itself. The current flow is then a non-linear function of the voltage applied. Ideally, the base-emitter voltage could be increased or decreased to change the collector current flow without significantly altering the collector-emitter or collector-base junction parameters.</p><p>In practical applications, biasing the EMB4T2R to the required operating point is a complex process requiring the derivation of biasing currents, voltages, temperatures, and power dissipations. The inputs, outputs, and other operating parameters must then be verified in a system model to ensure that the actual performance meets the specifications.</p><p>EMB4T2R devices are designed to operate at low voltage levels, typically in the low hundreds of millivolts, thereby allowing them to be implemented in low-cost, low-power applications. Furthermore, the high-switching speed of the device combined with the relatively low voltage levels for operation, makes them particularly suitable for high-speed data transmission applications.</p><p>The EMB4T2R is a family of pre-biased complementary transistors which are ideal for high power density, low power consumption and reliable operation. They are typically used in analog applications such as RF and digital switching, rectification and level shifters, and offer higher switching speeds than traditional BJTs. Their operating principle is based on the basic BJT theory and the biasing current and voltage values, temperatures, and power dissipations must be derived based upon the design and implementation of the circuit.</p>

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description