EMB61T2R Discrete Semiconductor Products |
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Allicdata Part #: | EMB61T2RTR-ND |
Manufacturer Part#: |
EMB61T2R |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS 2PNP PREBIAS 0.15W EMT6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi... |
DataSheet: | EMB61T2R Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 50mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 35 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 500µA, 5mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 250MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | EMT6 |
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The EMB61T2R is a pre-biased array of two-transistor bipolar junction transistors (BJTs) that are widely used in various applications. The two transistors are connected in a bipole configuration and are designed to have a wide temperature range and low saturation voltage. The pre-bias feature of this device allows for faster switching times and simplified circuit designs.
The EMB61T2R consists of two NPN and two PNP transistors connected in a common base configuration. The four transistors are connected in a fixed pattern: one pair of transistors is connected to a reference voltage, while the other two pairs are connected in series. The device also includes a current source that supplies bias current to the circuit, allowing the transistors to switch quickly.
The common base configuration is ideal for controlling the current flow in the circuit. It allows for fast switching times, which is important for applications that require the highest switching speeds. By adjusting the current source, the circuit can be designed to have different switching times, enabling it to be used in a variety of applications.
The EMB61T2R is designed to be used in a variety of applications. It is commonly used in radio receivers as a voltage-controlled oscillator (VCO) and in amplifiers for signal amplification. It is also used in pulse power and pulse width modulation (PWM) circuits, as well as infrared sensing applications. In addition, it can be used in switching power supplies and motor drivers, as well as a driver for display devices.
In terms of its working principle, the EMB61T2R uses two transistors in a common base configuration to control current flow. One of the transistors acts as a switch, while the other acts as an amplifier. The bias current supplied by the current source is used to adjust the switching speed of the circuit. When the bias current is adjusted, the switching time of the circuit changes accordingly. This allows for precise control of the circuit, enabling it to be used in a variety of applications.
The EMB61T2R provides a number of advantages over other transistor designs. First, it is pre-biased, meaning that it can switch at faster speeds than other transistors. Second, it is more reliable than other designs and can handle more current. Third, it is more precise and has less power dissipation, making it ideal for precision applications. Finally, it is more flexible and can be used in different types of circuits, making it suitable for a variety of applications.
The EMB61T2R is a valuable component in a variety of applications. With its pre-biased design and wide temperature range, it is ideal for switching, amplification and infrared sensing applications. Its fast switching speeds and precise control make it an ideal choice for a variety of applications. For these reasons, the EMB61T2R is a popular choice for electronics engineers who require reliable and precise transistor arrays.
The specific data is subject to PDF, and the above content is for reference
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