EMB75T2R Allicdata Electronics
Allicdata Part #:

EMB75T2RTR-ND

Manufacturer Part#:

EMB75T2R

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS 2PNP PREBIAS 0.15W EMT6
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi...
DataSheet: EMB75T2R datasheetEMB75T2R Datasheet/PDF
Quantity: 8000
8000 +: $ 0.04239
16000 +: $ 0.03768
24000 +: $ 0.03532
56000 +: $ 0.03140
Stock 8000Can Ship Immediately
$ 0.05
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6
Description

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The EMB75T2R is a part of bipolar junction transistor array pre-biased (BJT). BJT\'s are electronic devices manufactured through combining NPN and PNP transistors into one physical unit. These types of transistors are considered to be the most economical when compared to field-effect transistors (FETs) and integrated circuits (ICs). The EMB75T2R utilizes a pre-biased configuration of NPN and PNP transistors in order to reduce the amount of external components needed. This all-in-one solution results in more efficient circuit design and lower overall cost.

This type of transistor array is used extensively in the design of power and switching circuits, allowing for separate, independent control of each individual transistor. In addition, the pre-bias configuration of the EMB75T2R transistor array allows for safe quiescent operation and higher frequency operation without thermal runaway, which would damage the device if allowed to occur.

The EMB75T2R\'s application field primarily involves automotive, telecommunications, home appliance and industrial circuits as well as power conversion, logic and switching operations. This type of pre-biased transistor array has multiple uses including the control and regulation of motor drive systems, audio amplification systems and power electronics, among others. Some applications also require additional external components such as resistors, capacitors and diodes in order to better meet the requirements of the circuit.

The working principle of the EMB75T2R relies on the internal construction and bias arrangement of its transistors. Each transistor consists of three terminals – collector, base and emitter – that are connected via a substrate. With the EMB75T2R, the collectors of the NPN and PNP transistors are connected together and then connected to an external power supply that provides the necessary bias voltage. When conducting, current flows between the emitter and collector of each transistor and the external load is driven with the help of the externally supplied current.

In conclusion, the EMB75T2R is a type of pre-biased bipolar junction transistor array that is used extensively in the design of power and switching circuits. Its application field involves automotive, telecommunications, home appliance and industrial circuits as well as power conversion, logic and switching operations. Its working principle is based on the internal construction and bias arrangement of its transistors, allowing for separate, independent control of each individual transistor. Additionally, its pre-bias configuration allows for safe quiescent operation and higher frequency operation without thermal runaway, making it a cost-efficient and reliable solution for many circuit designs.

The specific data is subject to PDF, and the above content is for reference

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