EMB9T2R Allicdata Electronics

EMB9T2R Discrete Semiconductor Products

Allicdata Part #:

EMB9T2RTR-ND

Manufacturer Part#:

EMB9T2R

Price: $ 0.07
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS 2PNP PREBIAS 0.15W EMT6
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Bi...
DataSheet: EMB9T2R datasheetEMB9T2R Datasheet/PDF
Quantity: 1000
1 +: $ 0.07000
10 +: $ 0.06790
100 +: $ 0.06650
1000 +: $ 0.06510
10000 +: $ 0.06300
Stock 1000Can Ship Immediately
$ 0.07
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Base Part Number: MB9
Supplier Device Package: EMT6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Power - Max: 150mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Series: --
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 PNP - Pre-Biased (Dual)
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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The EMB9T2R is a pre-biased array of Bipolar Junction Transistors (BJT). It is typically used in circuits that require low power, high speed and high performance processing. The array consists of two BJT transistors arranged in a back-to-back configuration, where one transistor acts as a source and the other as a drain.The EMB9T2R transistors are designed to operate in a very low-voltage and high-current environment, allowing them to achieve high performance at a very low power level. The array is also able to handle high frequencies, up to 8Mhz. The transistors are also pre-biased and feature built-in matching resistors, which reduces the amount of external components needed.The overall structure of the EMB9T2R array is very simple. It consists of two NPN transistors, which are connected by a common connection, and two additional terminal connections that are connected to the collector. The collector connection is the output of the array, while the other terminal is the control terminal.The EMB9T2R can be used in a variety of applications. It is typically used in low-power circuits, audio amplifiers, driver amplifiers, relay drivers, and switching circuits. In particular, it is often used in applications where a low-distortion, high-bandwidth amplifier is required.The working principle of the EMB9T2R is also quite straightforward. When the control terminal is at a low voltage, the NPN transistors in the array will be off and the output will be off. When the control terminal is at a high voltage, both transistors will be on, allowing for a high-current output. This makes the EMB9T2R useful for applications that require high speeds and precision control.In summary, the EMB9T2R is a pre-biased array of Bipolar Junction Transistors (BJT). It is designed to operate in a low-voltage, high-current environment and is able to handle high frequencies. It is most often used in circuits that require low power, high speed and high performance processing and is usually used in low-power circuits, audio amplifiers, driver amplifiers, relay drivers, and switching circuits. The working principle is quite straightforward and involves the control terminal setting both transistors either on or off depending on its voltage level.

The specific data is subject to PDF, and the above content is for reference

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