EMC5DXV5T1G Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	47 kOhms, 4.7 kOhms
Resistor - Emitter Base (R2):	47 kOhms, 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 5mA, 10V / 20 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):	500nA
Frequency - Transition:	--
Power - Max:	500mW
Mounting Type:	Surface Mount
Package / Case:	SOT-553
Supplier Device Package:	SOT-553

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EMC5DXV5T1G is a type of pre-biased arrays of bipolar junction transistors (BJT). It is a 5-stage, high speed and logic-level NPN transistors with a common-emitter design. The pre-biasing is done using base-emitter voltage of 0.6V, which helps reduce the turn-on and turn-off times of the transistors and also increases their operating speeds. This makes the EMC5DXV5T1G well-suited for high speed, power-efficient applications.The EMC5DXV5T1G is capable of withstanding a wide range of conditions, such as temperature variations and power surges. Moreover, it has remarkably low thermal resistance, making it one of the most efficient pre-biased BJT arrays currently in the market. The base-emitter voltage (VBE) of the transistors is precisely set before assembly, which allows the array to adopt a wide temperature range, eliminating the need for temperature-dependent tightening of the voltage.The pre-biased EMC5DXV5T1G array is constructed from a series of five NPN silicon transistors, each with its individual base, collector, and emitter. Two chip resistors are used to maintain the required bias conditions for the transistors. The chip resistors are connected to the supply voltage, Vcc, and the reference voltage, Vref, of the array. The base-emitter voltage of the array transistors is 0.6 volts, which reduces the turn-on and turn-off times of the transistors and enables the high speed switching of the array.EMC5DXV5T1G can be used in a number of applications, such as pulse generators, digital logic systems, power and signal switching, motor drive circuits, digital to analog converters, and MOSFET power amplifiers. Due to its high speed and logic-level operation, it is ideal for applications where high-frequency performance and low-power consumption is needed. Additionally, its wide operating temperature range improves the reliability of the array.The working principle of the pre-biased EMC5DXV5T1G array is based on the use of two chip resistors connected to the array\'s supply voltage, Vcc, and its reference voltage, Vref. These two resistors maintain a base-emitter voltage of 0.6V which increases the speed and decreases the power consumption of the array by increasing the turn-on and turn-off times of the transistors. The array is also capable of withstanding wide temperature variations, eliminating the need for temperature-dependent voltage adjustment.In conclusion, the pre-biased EMC5DXV5T1G array is a high-speed, low-power, and logic-level BJT array that is well-suited for a wide range of applications. Its 0.6V base-emitter voltage ensures fast switching speeds, while its wide temperature range makes it even more reliable. Furthermore, its two chip resistors enable efficient pre-bias conditions, making it one of the most efficient pre-biased BJT arrays available in the market.

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