EMD12FHAT2R

The EMD12FHAT2R is an array of pre-biased transistors, made up of versatile NPN devices used for power amplification and switching applications. It is specially designed as a reliable alternative to discrete bipolar transistors and FET’s when high frequency performance, low noise and fast switching are key features. This type of transistors is ideal for applications that require a fast settling response, such as high speed analog to digital converters and adjustable power supplies.

The EMD12FHAT2R is composed of four heavily forwarded bias transistors and two power transistors, all fabricated on a single chip. The four forward-biased transistors are composed of two N-type and two P-type transistors, each having three gate connections: anemitter, a base and a collector. The power transistors are composed of one NPN and one PNP, each having four gate connections: a source, a gate, a drain and an emitter. Each component is individually connected to the chip’s bond pad for ease of board layout flexibility.

The EMD12FHAT2R employs a low operating voltage, allowing designers to create designs that are otherwise not possible with discrete bipolar transistors and FETs. It works by boosting the voltage across the load, allowing the load to move more quickly. This type of transistors also has a high switching frequency, low input and high output resistance, low transversal distortion, robust on-off switching performance, and low noise. Furthermore, it offers reliable high speed switching applications, with a voltage turn-on and turn-off transition time of less than one nanosecond.

The four NPN and two power transistors have several distinct benefits. Firstly, the low operating voltage of the EMD12FHAT2R allows the circuit designer to use a wide range of current sources and sinks, making it suitable for various applications. Secondly, the low voltage drop across the transistors provides a relatively high level of power efficiency. Thirdly, the high speed of operation (less than one nanosecond transition time) improves the time response of the system. Finally, it has low noise and thermal impedance, meaning that it will not interfere with other components in the circuit.

In summary, the EMD12FHAT2R is a versatile array of pre-biased transistors, designed for high speed switching applications. It functions by boosting the voltage across the load and has low operating voltage and high switching frequency. The four NPN and two power transistors present a wide range of current sources and sinks, high power efficiency, fast switching time, low noise, and low thermal impedance. Therefore, this type of transistors is ideal for digital-to-analog converters, power supplies, and other electronic devices that require a fast settling response.