EMF18XV6T5G Allicdata Electronics
Allicdata Part #:

EMF18XV6T5G-ND

Manufacturer Part#:

EMF18XV6T5G

Price: $ 0.11
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN PREBIAS/PNP SOT563
More Detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Bias...
DataSheet: EMF18XV6T5G datasheetEMF18XV6T5G Datasheet/PDF
Quantity: 1000
8000 +: $ 0.09147
Stock 1000Can Ship Immediately
$ 0.11
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 120 @ 1mA, 6V
Base Part Number: EMF
Supplier Device Package: SOT-563
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Power - Max: 500mW
Frequency - Transition: 140MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA / 500mV @ 5mA, 50mA
Series: --
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V, 60V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 1 NPN Pre-Biased, 1 PNP
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The EMF18XV6T5G is a pre-biased Transistor Array, consisting of four independent NPN Darlington pairs. It has the same specifications as its predecessor, the EMF18XV6T5G, but adds a high-current gain pull-up for improved performance. The EMF18XV6T5G is designed for a wide variety of applications, from motor control to inverter switching. It is also suitable for driving LED indicators, driving resistors and heaters, power transistors and power MOSFETs.

The EMF18XV6T5G works on the principle of current gain. It has the ability to reduce the base current, which increases the on-state current and provides more power to the load. This process is referred to as current amplification or gain. This gain is typically expressed in dB (decibels) and is the ratio of the output current to the input current.

The operation of the EMF18XV6T5G is based on its current gain configuration. The Darlington pairs in the array are connected in two stages. The first stage consists of two NPN transistors connected with their base-emitter terminals switched to a common base connection. The current gain of this stage is equal to the product of the current gains of each transistor. The second stage consists of two pairs of NPN transistors connected in a Darlington configuration. The current gain of this stage is equal to the product of the current gains of all four transistors.

The EMF18XV6T5G provides an improved multi-functionality compared to its predecessor. It is capable of driving LEDs, light bulbs, and resistors, as well as driving power transistors, power MOSFETs, and motor control applications. The low voltage capability of the EMF18XV6T5G is especially useful when powering LEDs, as it enables improved efficiency and off-state current draw. The EMF18XV6T5G can also be used in applications where the switching times are short and precision switching is required. It also offers a wide range of supply voltages, from 2.7 V to 15 V, and is able to handle up to 6 A of current.

The EMF18XV6T5G is an easy-to-use pre-biased Transistor Array. It can handle high currents and provides improved functionality compared to its predecessor. The high current gain and low voltage capability make it an ideal choice for a wide range of applications, including motor control, inverter switching, LED indicators, and more.

The specific data is subject to PDF, and the above content is for reference

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