EMF24T2R Allicdata Electronics
Allicdata Part #:

EMF24T2R-ND

Manufacturer Part#:

EMF24T2R

Price: $ 0.07
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS NPN PREBIAS/NPN 0.15W EMT6
More Detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Bias...
DataSheet: EMF24T2R datasheetEMF24T2R Datasheet/PDF
Quantity: 1000
8000 +: $ 0.06073
Stock 1000Can Ship Immediately
$ 0.07
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Not For New Designs
Transistor Type: 1 NPN Pre-Biased, 1 NPN
Current - Collector (Ic) (Max): 100mA, 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 180 @ 1mA, 6V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz, 180MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6
Description

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The EMF24T2R is an advanced three-line transistor array which is pre-biased to give an improved output impedance and better noise immunity. The EMF24T2R is suitable for use in a wide range of applications including digital circuits, analog circuits, and switching systems. This article will discuss the application field and working principle of the EMF24T2R.

The EMF24T2R utilises a three-line array structure. The transistor array consists of four transistors connected in parallel, each with a separate emitter line. The emitter lines are connected to three separate biasing networks to ensure accurate biasing of the transistors. The array is pre-biased to give an improved output impedance and better noise immunity.

The EMF24T2R is suitable for use in a wide range of applications. The high-performan

The specific data is subject to PDF, and the above content is for reference

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