Allicdata Part #: | EMF8T2R-ND |
Manufacturer Part#: |
EMF8T2R |
Price: | $ 0.10 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS NPN PREBIAS/NPN 0.15W EMT6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Bias... |
DataSheet: | EMF8T2R Datasheet/PDF |
Quantity: | 1000 |
8000 +: | $ 0.08705 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Transistor Type: | 1 NPN Pre-Biased, 1 NPN |
Current - Collector (Ic) (Max): | 100mA, 500mA |
Voltage - Collector Emitter Breakdown (Max): | 50V, 12V |
Resistor - Base (R1): | 47 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 68 @ 5mA, 5V / 270 @ 10mA, 2V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 250MHz, 320MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | EMT6 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The EMF8T2R is a pre-biased series of transistors built with the bipolar junction (BJT) style of electronics. This type of transistor provides a high-gain current generation capability and a relatively low voltage drop. The EMF8T2R is designed for applications involving a large current load and a small voltage drop. It can also handle short-term current surges, as well as small-scale, low-current devices.
The EMF8T2R is optimized for applications such as security systems, automotive, telecommunications, and various industrial uses. It is also used in instrumentation and data acquisition applications. This type of transistor is becoming increasingly popular due to its ability to handle large current loads and its relatively low voltage drop.
The EMF8T2R is a pre-biased transistor array that has been designed to provide a stable, current-generating solution. It consists of an array of NPN transistors in parallel, with each one individually biased. The pre-biased configuration allows the EMF8T2R to generate up to 10 amperes of current, with a voltage drop of just 0.1 volts. This type of transistor is ideal for applications that require the use of current generation and small voltage drops over a wide range of temperatures.
The working principle of the EMF8T2R is based on NPN transistor configurations. This type of design uses two transistors, one of the NPN type and one of the PNP type. Both transistors are connected in parallel and they share their characteristics. When a voltage is applied to the base pin, current flows through the transistor, creating an output. This output current can then be used as the input to power other components, such as a motor or other analog devices.
The pre-biased configuration of the EMF8T2R offers several advantages. For one, it provides a very low voltage drop for applications that require high current, such as those used in automotive and telecommunications applications. Additionally, the array arrangement provides superior temperature stability, which is important for industrial applications.The EMF8T2R is a versatile and reliable transistor array, which has many applications. It is well-suited for applications that require a large current load, while maintaining a low voltage drop at a wide range of temperatures. This type of transistor array is becoming increasingly popular due to its cost-effectiveness, as well as its ability to provide good performance in many applications.
The specific data is subject to PDF, and the above content is for reference
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