Allicdata Part #: | EMG11T2RTR-ND |
Manufacturer Part#: |
EMG11T2R |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS 2NPN PREBIAS 0.15W EMT5 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | EMG11T2R Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 250MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | 6-SMD (5 Leads), Flat Lead |
Supplier Device Package: | EMT5 |
Base Part Number: | *MG11 |
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Bipolar Junction Transistors, or BJTs, are a type of transistor that allows the flow of current through the base-collector junction when the base voltage is greater than the collector voltage. The EMG11T2R pre-biased array is a low-noise, high-power bipolar junction transistor designed specifically for audio amplification. It has been optimized for use in applications that require low noise and high power output.
The EMG11T2R is a 4-transistor array with a current gain of approximately 20 and a collector-emitter voltage of typically 20 V. It has a very low noise figure and is capable of delivering more than 10W of power. The device features a low input capacitance and a low junction capacitance, allowing it to be operated in high-power, low noise applications.
The EMG11T2R is a silicon based transistor which is specially designed and optimized for audio applications. It features a high-current gain, low-noise level and low-power consumption. The open collector construction allows the device to be used in both AC and DC applications.
The EMG11T2R is usually used in audio power amplifiers and power supplies due to its high-power output capabilities. It is also suitable for use in other types of audio applications, such as pre-amplifiers and communication systems. The device is designed to operate within a wide range of temperatures, making it suitable for use in both indoor and outdoor environments.
When it comes to working principles, the EMG11T2R employs the common emitter configuration which relies on the base-emitter junction for controlling the output current. In this configuration, when the base current is increased, the output current, which is measured at the collector, also increases. This increase in current causes the collector voltage to drop.
The EMG11T2R is a pre-biased transistor array, meaning that the base-emitter junction is forward biased. This biases the transistor in the active region and allows for an active operation. Since the base of the transistor is biased, the concentration of carriers in the base decreases and the overall gain of the transistor decreases as well.
The EMG11T2R is a versatile and powerful pre-biased transistor suitable for a variety of audio applications. It has a low noise figure and is capable of providing high power outputs. Its open-collector construction allows for use in both AC and DC applications, making it ideal for use in audio power amplifiers, as well as other audio applications.
The specific data is subject to PDF, and the above content is for reference
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