EMG3T2R Allicdata Electronics

EMG3T2R Discrete Semiconductor Products

Allicdata Part #:

EMG3T2RTR-ND

Manufacturer Part#:

EMG3T2R

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS 2NPN PREBIAS 0.15W EMT3
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: EMG3T2R datasheetEMG3T2R Datasheet/PDF
Quantity: 1000
1 +: $ 0.05000
10 +: $ 0.04850
100 +: $ 0.04750
1000 +: $ 0.04650
10000 +: $ 0.04500
Stock 1000Can Ship Immediately
$ 0.05
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Base Part Number: *MG3
Supplier Device Package: EMT3
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Power - Max: 150mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Series: --
Resistor - Emitter Base (R2): --
Resistor - Base (R1): 4.7 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 NPN - Pre-Biased (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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EMG3T2R is a type of transistor array used in many electronic applications. It is based on a pre-biased BJT (bipolar junction transistor) structure. The EMG3T2R is normally used as a signal conditioner, level shifter, and driver for audio, video, and other signal processing applications. The EMG3T2R is designed to provide the necessary speed, linearity, and power handling capabilities for these types of applications and has proven to be a reliable, durable, and cost-effective choice for many engineering designs.

The EMG3T2R pre-biased BJT structure is designed to help ensure that the transistor base and collector voltages remain constant. This allows the transistor to operate in its linear range, providing a stable current/voltage relationship with minimal distortion. This is done by applying a bias voltage to the base of the transistor, which is above the threshold voltage. This pre-biased biasing helps ensure that the current remains constant throughout the linear range, regardless of load variations.

The base and collector of the EMG3T2R are connected through a resistor network, which provides feedback and current control to prevent the transistor from reaching saturation. This helps reduce distortion, since it prevents the transistor from entering its highly non-linear region. At the same time, the resistor network also helps minimize power consumption, since it reduces the current needed to drive the transistors from the external power sources.

The EMG3T2R transistor array also comes with a wide range of other features, such as an adjustable supply current, thermal protection, and low noise operation. The adjustable supply current makes the EMG3T2R suitable for applications that require varying amounts of current, such as AC or DC motors. The thermal protection feature helps protect the EMG3T2R from possible thermal overloading, while the low noise operation ensures that unwanted noise is minimized during operation.

The EMG3T2R is also highly dXdurable and reliable, with its components being rated to last up to 10,000 hours. This makes it a suitable choice for applications that require extended periods of operation, such as those found in automotive, industrial, and consumer electronics applications. Additionally, its low power consumption makes it an attractive choice for many designs.

The EMG3T2R is a versatile and reliable choice for many signal processing applications. It can be used as a signal conditioner, level shifter, and driver for audio, video, and other signal processing applications. It is an efficient and reliable choice for many engineering designs, and its wide range of features makes it a suitable choice for many different applications.

The specific data is subject to PDF, and the above content is for reference

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