
EMG3T2R Discrete Semiconductor Products |
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Allicdata Part #: | EMG3T2RTR-ND |
Manufacturer Part#: |
EMG3T2R |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS 2NPN PREBIAS 0.15W EMT3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.05000 |
10 +: | $ 0.04850 |
100 +: | $ 0.04750 |
1000 +: | $ 0.04650 |
10000 +: | $ 0.04500 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
Base Part Number: | *MG3 |
Supplier Device Package: | EMT3 |
Package / Case: | SC-75, SOT-416 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 250µA, 5mA |
Series: | -- |
Resistor - Emitter Base (R2): | -- |
Resistor - Base (R1): | 4.7 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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EMG3T2R is a type of transistor array used in many electronic applications. It is based on a pre-biased BJT (bipolar junction transistor) structure. The EMG3T2R is normally used as a signal conditioner, level shifter, and driver for audio, video, and other signal processing applications. The EMG3T2R is designed to provide the necessary speed, linearity, and power handling capabilities for these types of applications and has proven to be a reliable, durable, and cost-effective choice for many engineering designs.
The EMG3T2R pre-biased BJT structure is designed to help ensure that the transistor base and collector voltages remain constant. This allows the transistor to operate in its linear range, providing a stable current/voltage relationship with minimal distortion. This is done by applying a bias voltage to the base of the transistor, which is above the threshold voltage. This pre-biased biasing helps ensure that the current remains constant throughout the linear range, regardless of load variations.
The base and collector of the EMG3T2R are connected through a resistor network, which provides feedback and current control to prevent the transistor from reaching saturation. This helps reduce distortion, since it prevents the transistor from entering its highly non-linear region. At the same time, the resistor network also helps minimize power consumption, since it reduces the current needed to drive the transistors from the external power sources.
The EMG3T2R transistor array also comes with a wide range of other features, such as an adjustable supply current, thermal protection, and low noise operation. The adjustable supply current makes the EMG3T2R suitable for applications that require varying amounts of current, such as AC or DC motors. The thermal protection feature helps protect the EMG3T2R from possible thermal overloading, while the low noise operation ensures that unwanted noise is minimized during operation.
The EMG3T2R is also highly dXdurable and reliable, with its components being rated to last up to 10,000 hours. This makes it a suitable choice for applications that require extended periods of operation, such as those found in automotive, industrial, and consumer electronics applications. Additionally, its low power consumption makes it an attractive choice for many designs.
The EMG3T2R is a versatile and reliable choice for many signal processing applications. It can be used as a signal conditioner, level shifter, and driver for audio, video, and other signal processing applications. It is an efficient and reliable choice for many engineering designs, and its wide range of features makes it a suitable choice for many different applications.
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Part Number | Manufacturer | Price | Quantity | Description |
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EMG3T2R | ROHM Semicon... | -- | 1000 | TRANS 2NPN PREBIAS 0.15W ... |
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