EMG4T2R Discrete Semiconductor Products

DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 1mA, 5V
Base Part Number:	*MG4
Supplier Device Package:	EMT5
Package / Case:	6-SMD (5 Leads), Flat Lead
Mounting Type:	Surface Mount
Power - Max:	150mW
Frequency - Transition:	250MHz
Current - Collector Cutoff (Max):	--
Vce Saturation (Max) @ Ib, Ic:	300mV @ 1mA, 10mA
Series:	--
Resistor - Emitter Base (R2):	--
Resistor - Base (R1):	10 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	2 NPN - Pre-Biased (Dual)
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The EMG4T2R is a family of pre-biased array transistors, based on the bipolar junction transistor (BJT). This type of transistor is commonly used in various electronics applications, such as RF amplifiers and signal processing.The EMG4T2R is designed with a predefined bias voltage, which helps to reduce the complexity of circuit design and cuts down on the cost of implementation. The device also has a low noise figure, making it suitable for use in high frequency applications. The working principle of the EMG4T2R is based on the classical physics of an electric circuit. The input signal is sent to the transistor’s base, and the output is taken from the collector. The current from the input signal is amplified by the transistor’s gain, and the output voltage is proportional to the input voltage.The EMG4T2R is widely used in various applications, such as RF amplifiers, signal processing, power conversion, and audio amplifiers. For RF amplifiers, the device is ideal due to its high linearity and low noise figure. For signal processing, the EMG4T2R can be used as an integrated amplifier or for automatic gain control. The high gain of the EMG4T2R makes it a suitable choice for power conversion applications such as solar converters and dc-dc converters. Finally, in audio amplifiers, the device can provide a high level of power output, low distortion, and low output impedance. The EMG4T2R is a versatile and reliable transistor, and its features make it suitable for a wide range of applications. The device’s pre-biased structure helps to simplify circuit design, and its high linearity and low noise figure make it a great choice for high frequency applications. The EMG4T2R has been used in many successful projects, and it is likely to remain popular in the future.

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