EMG6T2R

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	47 kOhms
Resistor - Emitter Base (R2):	--
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 1mA, 10mA
Current - Collector Cutoff (Max):	500nA (ICBO)
Frequency - Transition:	250MHz
Power - Max:	150mW
Mounting Type:	Surface Mount
Package / Case:	6-SMD (5 Leads), Flat Lead
Supplier Device Package:	EMT5
Base Part Number:	*MG6

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Introduction

The EMG6T2R is a specialized integrated circuit that provides a very high current gain and adjustable pre-biased performance characteristics. It is a high-performance, low-power, low-noise bipolar transistor array requiring very little power input for operation. It is designed for use in amplifying or switching signals in the DC to 2.2GHz frequency range. In this article, the application field and working principle of the EMG6T2R is discussed in detail.

Application Field

The EMG6T2R is designed for use in a variety of applications, most notably RF and high-speed, low-power computing applications. It is suitable for use as a driver in power amplifiers, switching or phase shifter amplifiers, RF signal mixing and other power-related high-speed, low-noise signal applications.The EMG6T2R can also be used in switched power supply designs, motor drives, automotive power designs, and industrial control implementations, among many other high-speed and low-power signal applications.

Working Principle

The EMG6T2R works by using an adjustable pre-biased voltage, which is applied to the emitter of the NPN bipolar transistor array, enabling an adjustable high current gain. This adjustable pre-bias voltage ensures the transistor array has a current gain of up to 4.5V for all of its circuits. The EMG6T2R has a high current gain from the base to the emitter of up to 5.5V. This high current gain enables the EMG6T2R to operate even at very low power inputs (less than 1 mV for its switching applications). The EMG6T2R also makes use of its low-noise characteristics, which enable it to be used in high-speed applications. The EMG6T2R also has an adjustable bias voltage input, which allows the user to adjust the current gain when using the device in different applications. This adjustable bias voltage ensures the device is suitable for operation at different frequency ranges and power levels.

Conclusion

In conclusion, the EMG6T2R is a specialized integrated circuit that provides a very high current gain and adjustable pre-biased performance characteristics. It is suitable for use in a variety of applications, most notably RF and high-speed, low-power computing applications. The EMG6T2R works by using an adjustable pre-biased voltage which is applied to the emitter of the NPN bipolar transistor array, enabling an adjustable high current gain. This adjustable pre-bias voltage ensures the transistor array has a current gain of up to 4.5V for all of its circuits. Overall, the EMG6T2R is an excellent choice for amplifying or switching signals in the DC to 2.2GHz frequency range.

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