EMG8T2R Discrete Semiconductor Products |
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Allicdata Part #: | EMG8T2RTR-ND |
Manufacturer Part#: |
EMG8T2R |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS 2NPN PREBIAS 0.15W EMT5 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | EMG8T2R Datasheet/PDF |
Quantity: | 16000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 250MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | 6-SMD (5 Leads), Flat Lead |
Supplier Device Package: | EMT5 |
Base Part Number: | *MG8 |
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An EMG8T2R is an 8-bit, multi-state, pre-biased transistor array that combines a general-purpose amplifier and a TTL compatible input stage in one integrated package. This transistor array can be used for a wide range of applications in different fields like logic switching, buffering, multi-dropping and many more.
The EMG8T2R consists of 8 identical NPN bipolar junction transistors (BJT). Each of them is connected in a complementary push-pull arrangement and is pre-biased with a 100KΩ resistor. It has a typical voltage gain of 6V/V and a rise time of 20nS.
The working principle of the EMG8T2R can be explained in two parts. First, let us consider the amplifier stage. Here, each NPN transistor is connected to a common base and collector. When the input voltage is applied, the current passes through the base-emitter junction and the corresponding collector current is established. This collector current is amplified according to the pre-biased resistor and then combines to form the output voltage.
The second part of the working principle is the TTL compatible input stage. Here, the input voltage is applied to the NPN transistors, the corresponding collector current is increased, which will switch the transistor accordingly. This helps to change the output voltage level and can be used for logic switching.
The EMG8T2R is used in a variety of different applications. It is mainly used in memory devices, signal buffering, clock sources, and multi-drop communication networks. It can also be used in motor and amplifier switching, AC and DC signal splitting, analog signal switching, and digital logic applications.
In conclusion, the EMG8T2R is a multi-state, pre-biased transistor array that has many applications in different fields. It is an 8-bit array composed of identical NPN bipolar junction transistors and has a typical voltage gain of 6V/V and is pre-biased with a 100KΩ resistor. The EMG8T2R works by using two stages, an amplifier stage and a TTL compatible input stage, to provide a variety of logic switching, buffering, and multi-dropping functions.
The specific data is subject to PDF, and the above content is for reference
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