EMG9T2R Allicdata Electronics

EMG9T2R Discrete Semiconductor Products

Allicdata Part #:

EMG9T2RTR-ND

Manufacturer Part#:

EMG9T2R

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS 2NPN PREBIAS 0.15W EMT5
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: EMG9T2R datasheetEMG9T2R Datasheet/PDF
Quantity: 16000
Stock 16000Can Ship Immediately
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Base Part Number: *MG9
Supplier Device Package: EMT5
Package / Case: 6-SMD (5 Leads), Flat Lead
Mounting Type: Surface Mount
Power - Max: 150mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Series: --
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 NPN - Pre-Biased (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The EMG9T2R is a form of pre-biased transistor array. It is used in a variety of applications, such as amplifying, switching, and controlling signals. Its versatile structure makes it ideal for a range of distributed gain and specificity requirements. The EMG9T2R includes two matched NPN transistors and a single PNP. The NPN transistors are pre-biased, meaning that the necessary biasing is already applied to the transistors when it is inserted into the circuit. The device is constructed on a single monolithic substrate, which minimizes the need for discrete components. This helps to reduce the noise of the overall circuit. The EMG9T2R is designed to provide high-gain, high-input impedance, and low-output impedance while minimizing power dissipation. The device provides an output voltage that is proportional to the input current, making it ideal for controlling signals with precision. The device is also capable of providing the necessary gain and stability for complex gate, logic, and output functionalities. The EMG9T2R\'s internal circuitry is designed to minimize the effects of second-order distortion and its associated noise, making it a good choice for signal processing applications. The EMG9T2R is also designed to provide high-frequency performance. The device is designed to operate up to frequencies of 25MHz, making it suitable for applications that require a fast response times. It is also designed to handle large input currents with minimal distortion. This makes it a good choice for high-power applications, such as switching and controlling power supplies. The EMG9T2R\'s internal components are configured to maximize its performance. The device includes a Darlington pair that is used to increase overall gain. A zener diode is included to protect the device from power supply spikes, helping to ensure its reliability. Additionally, a base resistor and a base resistor capacitor are included for improved stability. Overall, the EMG9T2R is versatile and well-suited for a variety of applications. Its pre-biased design allows it to be used with minimal effort, making it ideal for both novice and experienced engineers. Its high-input impedance and low-output impedance make it a great choice for many signal processing and power management projects. Its wide range of operating frequencies makes it suitable for high-performance tasks. Its protective components help ensure its long-term reliability. And its high-gain design allows it to produce powerful and precise signals.

The specific data is subject to PDF, and the above content is for reference

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