EMH4T2R Allicdata Electronics
Allicdata Part #:

EMH4T2RTR-ND

Manufacturer Part#:

EMH4T2R

Price: $ 0.07
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS 2NPN PREBIAS 0.15W EMT6
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: EMH4T2R datasheetEMH4T2R Datasheet/PDF
Quantity: 1000
1 +: $ 0.07000
10 +: $ 0.06790
100 +: $ 0.06650
1000 +: $ 0.06510
10000 +: $ 0.06300
Stock 1000Can Ship Immediately
$ 0.07
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Base Part Number: *MH4
Supplier Device Package: EMT6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Power - Max: 150mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Series: --
Resistor - Emitter Base (R2): --
Resistor - Base (R1): 10 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 NPN - Pre-Biased (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The EMH4T2R is a highly versatile pre-biased bipolar junction transistor (BJT) array designed for applications in a wide variety of situations. This array of four BJTs utilizes both NPN and PNP transistors in the same package, allowing for many different configurations. The EMH4T2R has a very low on-resistance and can operate at frequencies up to 200 kHz. Due to its pre-biased nature, the EMH4T2R is especially suitable for small-signal and low-voltage usage.

The EMH4T2R is among the most versatile of BJT arrays available today. It is capable of working in both single-ended and differential configurations, due to the fact that it has both NPN and PNP transistors included in the same package. This combination allows the array to be used in a variety of different circuits, making it an ideal choice for applications where flexibility is of utmost importance.

The EMH4T2R has a wide variety of applications and is typically used in circuit configurations for signal amplification, switching, and control systems. It has a low on-resistance and can operate at frequencies up to 200 kHz, making it suitable for a variety of high-speed applications. It is also capable of handling an input signal voltage range of up to 30V, making it ideal for low-voltage signal amplification.

The EMH4T2R’s main advantage is its pre-biased nature. This means that it is set in a predefined state, with precise values of current and voltage already in place. This eliminates the need for any additional circuitry or components, resulting in a much simpler and more cost-effective circuit design. Thus, the EMH4T2R can be used in applications that require a high level of accuracy and reliability.

The EMH4T2R’s working principle is based on the junction of an NPN and a PNP transistor. The NPN and PNP transistors are connected in parallel and the current flow is controlled by a common base. The current flow is then regulated by the base-collector voltage. The base-emitter voltage is used to turn on or turn off the NPN and PNP transistors, which allows the EMH4T2R to switch between two fixed resistances.

In conclusion, the EMH4T2R is a pre-biased BJT array with a wide range of applications and a very low on-resistance. It is suitable for applications such as signal amplification, switching, and control systems. It is especially advantageous in designs that require a high degree of accuracy, due to its pre-biased nature. Its principle of operation allows it to switch between two fixed resistances by controlling the current flow with the common base and regulating the base-collector voltage.

The specific data is subject to PDF, and the above content is for reference

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