
Allicdata Part #: | EMH4T2RTR-ND |
Manufacturer Part#: |
EMH4T2R |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS 2NPN PREBIAS 0.15W EMT6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.07000 |
10 +: | $ 0.06790 |
100 +: | $ 0.06650 |
1000 +: | $ 0.06510 |
10000 +: | $ 0.06300 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
Base Part Number: | *MH4 |
Supplier Device Package: | EMT6 |
Package / Case: | SOT-563, SOT-666 |
Mounting Type: | Surface Mount |
Power - Max: | 150mW |
Frequency - Transition: | 250MHz |
Current - Collector Cutoff (Max): | 500nA (ICBO) |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 1mA, 10mA |
Series: | -- |
Resistor - Emitter Base (R2): | -- |
Resistor - Base (R1): | 10 kOhms |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Current - Collector (Ic) (Max): | 100mA |
Transistor Type: | 2 NPN - Pre-Biased (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The EMH4T2R is a highly versatile pre-biased bipolar junction transistor (BJT) array designed for applications in a wide variety of situations. This array of four BJTs utilizes both NPN and PNP transistors in the same package, allowing for many different configurations. The EMH4T2R has a very low on-resistance and can operate at frequencies up to 200 kHz. Due to its pre-biased nature, the EMH4T2R is especially suitable for small-signal and low-voltage usage.
The EMH4T2R is among the most versatile of BJT arrays available today. It is capable of working in both single-ended and differential configurations, due to the fact that it has both NPN and PNP transistors included in the same package. This combination allows the array to be used in a variety of different circuits, making it an ideal choice for applications where flexibility is of utmost importance.
The EMH4T2R has a wide variety of applications and is typically used in circuit configurations for signal amplification, switching, and control systems. It has a low on-resistance and can operate at frequencies up to 200 kHz, making it suitable for a variety of high-speed applications. It is also capable of handling an input signal voltage range of up to 30V, making it ideal for low-voltage signal amplification.
The EMH4T2R’s main advantage is its pre-biased nature. This means that it is set in a predefined state, with precise values of current and voltage already in place. This eliminates the need for any additional circuitry or components, resulting in a much simpler and more cost-effective circuit design. Thus, the EMH4T2R can be used in applications that require a high level of accuracy and reliability.
The EMH4T2R’s working principle is based on the junction of an NPN and a PNP transistor. The NPN and PNP transistors are connected in parallel and the current flow is controlled by a common base. The current flow is then regulated by the base-collector voltage. The base-emitter voltage is used to turn on or turn off the NPN and PNP transistors, which allows the EMH4T2R to switch between two fixed resistances.
In conclusion, the EMH4T2R is a pre-biased BJT array with a wide range of applications and a very low on-resistance. It is suitable for applications such as signal amplification, switching, and control systems. It is especially advantageous in designs that require a high degree of accuracy, due to its pre-biased nature. Its principle of operation allows it to switch between two fixed resistances by controlling the current flow with the common base and regulating the base-collector voltage.
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Part Number | Manufacturer | Price | Quantity | Description |
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EMH4T2R | ROHM Semicon... | -- | 1000 | TRANS 2NPN PREBIAS 0.15W ... |
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